| Handbook of semiconductor manufacturing technology Y Nishi, R Doering CRC press, 2000 | 1033 | 2000 |
| Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method Y Li, D Mann, M Rolandi, W Kim, A Ural, S Hung, A Javey, J Cao, D Wang, ... Nano letters 4 (2), 317-321, 2004 | 720 | 2004 |
| Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen G Zhang, D Mann, L Zhang, A Javey, Y Li, E Yenilmez, Q Wang, ... Proceedings of the National Academy of Sciences 102 (45), 16141-16145, 2005 | 548 | 2005 |
| Achieving direct band gap in germanium through integration of Sn alloying and external strain S Gupta, B Magyari-Köpe, Y Nishi, KC Saraswat Journal of Applied Physics 113 (7), 2013 | 488 | 2013 |
| Study of silicon-silicon dioxide structure by electron spin resonance I Y Nishi Japanese Journal of Applied Physics 10 (1), 52, 1971 | 443 | 1971 |
| Monolithic 3D integrated circuits S Wong, A El-Gamal, P Griffin, Y Nishi, F Pease, J Plummer 2007 International Symposium on VLSI Technology, Systems and Applications …, 2007 | 353 | 2007 |
| Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy H Li, M Du, MJ Mleczko, AL Koh, Y Nishi, E Pop, AJ Bard, X Zheng Journal of the American Chemical Society 138 (15), 5123-5129, 2016 | 275 | 2016 |
| Bipolar resistive switching in polycrystalline TiO2 films K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi Applied physics letters 90 (11), 2007 | 251 | 2007 |
| DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mV/decade switching Y Lu, S Bangsaruntip, X Wang, L Zhang, Y Nishi, H Dai Journal of the American Chemical Society 128 (11), 3518-3519, 2006 | 251 | 2006 |
| HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ... Science advances 3 (8), e1700481, 2017 | 250 | 2017 |
| Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime K Uchida, T Krishnamohan, KC Saraswat, Y Nishi IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 237 | 2005 |
| Electronic correlation effects in reduced rutile TiO 2 within the LDA+ U method SG Park, B Magyari-Köpe, Y Nishi Physical Review B 82 (11), 115109, 2010 | 234 | 2010 |
| Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate SL Cheng, J Lu, G Shambat, HY Yu, K Saraswat, J Vuckovic, Y Nishi Optics Express 17 (12), 10019-10024, 2009 | 229 | 2009 |
| Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application M Kobayashi, A Kinoshita, K Saraswat, HSP Wong, Y Nishi Journal of applied physics 105 (2), 2009 | 218 | 2009 |
| Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2 S Kumar, MD Pickett, JP Strachan, G Gibson, Y Nishi, RS Williams arXiv preprint arXiv:1510.06694, 2015 | 217 | 2015 |
| Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014 | 188 | 2014 |
| Physical origins of current and temperature controlled negative differential resistances in NbO2 S Kumar, Z Wang, N Davila, N Kumari, KJ Norris, X Huang, JP Strachan, ... Nature communications 8 (1), 658, 2017 | 178 | 2017 |
| Structural and Electrical Investigation of C60–Graphene Vertical Heterostructures K Kim, TH Lee, EJG Santos, PS Jo, A Salleo, Y Nishi, Z Bao ACS nano 9 (6), 5922-5928, 2015 | 171 | 2015 |
| High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments T Krishnamohan, Z Krivokapic, K Uchida, Y Nishi, KC Saraswat IEEE Transactions on Electron Devices 53 (5), 990-999, 2006 | 168 | 2006 |
| Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in for Resistive Switching Memory SG Park, B Magyari-Köpe, Y Nishi IEEE Electron Device Letters 32 (2), 197-199, 2010 | 161 | 2010 |
