| How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ... IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003 | 116 | 2003 |
| Si/SiO2 core shell clusters probed by Raman spectroscopy G Faraci, S Gibilisco, P Russo, AR Pennisi, G Compagnini, S Battiato, ... The European Physical Journal B-Condensed Matter and Complex Systems 46, 457-461, 2005 | 67 | 2005 |
| Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories G Molas, B De Salvo, G Ghibaudo, D Mariolle, A Toffoli, N Buffet, R Puglisi, ... IEEE transactions on nanotechnology 3 (1), 42-48, 2004 | 59 | 2004 |
| Chemical vapor deposition growth of silicon nanowires with diameter smaller than 5 nm RA Puglisi, C Bongiorno, S Caccamo, E Fazio, G Mannino, F Neri, ... ACS omega 4 (19), 17967-17971, 2019 | 54 | 2019 |
| Molecular doping applied to Si nanowires array based solar cells RA Puglisi, C Garozzo, C Bongiorno, S Di Franco, M Italia, G Mannino, ... Solar Energy Materials and Solar Cells 132, 118-122, 2015 | 51 | 2015 |
| Nucleation kinetics of Si quantum dots on G Nicotra, RA Puglisi, S Lombardo, C Spinella, M Vulpio, G Ammendola, ... Journal of Applied Physics 95 (4), 2049-2055, 2004 | 47 | 2004 |
| Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb nor Flash Device C Gerardi, V Ancarani, R Portoghese, S Giuffrida, M Bileci, G Bimbo, ... IEEE transactions on electron devices 54 (6), 1376-1383, 2007 | 30 | 2007 |
| Growth and characterization of LPCVD Si quantum dots on insulators T Baron, F Mazen, JM Hartmann, P Mur, RA Puglisi, S Lombardo, ... Solid-State Electronics 48 (9), 1503-1509, 2004 | 30 | 2004 |
| Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes S Saadaoui, MAB Youssef, MB Karoui, R Gharbi, E Smecca, V Strano, ... Beilstein Journal of Nanotechnology 8 (1), 287-295, 2017 | 29 | 2017 |
| Large-grained polycrystalline Si films obtained by selective nucleation and solid phase epitaxy RA Puglisi, H Tanabe, CM Chen, HA Atwater Materials Science and Engineering: B 73 (1-3), 212-217, 2000 | 27 | 2000 |
| Partial self-ordering observed in silicon nanoclusters deposited on silicon oxide substrates by chemical vapor deposition RA Puglisi, G Nicotra, S Lombardo, C Spinella, G Ammendola, C Gerardi Physical Review B 71 (12), 125322, 2005 | 25 | 2005 |
| Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2 RA Puglisi, G Nicotra, S Lombardo, C Spinella, G Ammendola, M Bileci, ... Surface Science 550 (1-3), 119-126, 2004 | 22 | 2004 |
| Imaging of Si quantum dots as charge storage nodes RA Puglisi, S Lombardo, G Ammendola, G Nicotra, C Gerardi Materials Science and Engineering: C 23 (6-8), 1047-1051, 2003 | 21 | 2003 |
| A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method RA Puglisi, S Caccamo, L D'Urso, G Fisichella, F Giannazzo, M Italia, ... physica status solidi (a) 212 (8), 1685-1694, 2015 | 20 | 2015 |
| Advantages of the FinFET architecture in SONOS and nanocrystal memory devices S Lombardo, C Gerardi, L Breuil, C Jahan, L Perniola, G Cina, D Corso, ... 2007 IEEE International Electron Devices Meeting, 921-924, 2007 | 20 | 2007 |
| Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics S Caccamo, RA Puglisi, S Di Franco, L D’Urso, V Indelicato, M Italia, ... Materials Science in Semiconductor Processing 42, 200-203, 2016 | 19 | 2016 |
| Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering S Lombardo, RA Puglisi, I Crupi, D Corso, G Nicotra, L Perniola, ... Proceedings of the IEEE Non-volatile Semiconductor Memory Workshop, 2004 | 18 | 2004 |
| Competition between uncatalyzed and catalyzed growth during the plasma synthesis of Si nanowires and its role on their optical properties C Garozzo, A La Magna, G Mannino, V Privitera, S Scalese, PM Sberna, ... Journal of Applied Physics 113 (21), 2013 | 17 | 2013 |
| 4H-SiC Schottky photodiode based demonstrator board for UV-index monitoring M Mazzillo, P Shukla, R Mallik, M Kumar, R Previti, G Di Marco, A Sciuto, ... IEEE Sensors Journal 11 (2), 377-381, 2010 | 17 | 2010 |
| Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories RA Puglisi, S Lombardo, D Corso, I Crupi, G Nicotra, L Perniola, ... Journal of applied physics 100 (8), 2006 | 17 | 2006 |
Salvatore LombardoCNR-IMMVerified email at imm.cnr.it
