Myoung-Jae Lee
Myoung-Jae Lee
Daegu Gyeongubuk Institute of Science & Technology (DGIST)
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ...
Nature materials 10 (8), 625-630, 2011
Reproducible resistance switching in polycrystalline NiO films
S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ...
Applied Physics Letters 85 (23), 5655-5657, 2004
Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, ...
Applied physics letters 88 (20), 2006
Two series oxide resistors applicable to high speed and high density nonvolatile memory
MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ...
Advanced Materials 19 (22), 3919-3923, 2007
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory
MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ...
Nano letters 9 (4), 1476-1481, 2009
In situ observation of filamentary conducting channels in an asymmetric Ta2O5x/TaO2−x bilayer structure
GS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ...
Nature communications 4 (1), 2382, 2013
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
IG Baek, DC Kim, MJ Lee, HJ Kim, EK Yim, MS Lee, JE Lee, SE Ahn, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-type SnS2 and Orthorhombic p-type SnS Crystals
JH Ahn, MJ Lee, H Heo, JH Sung, K Kim, H Hwang, MH Jo
Nano Letters, 2015
Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
GS Park, XS Li, DC Kim, RJ Jung, MJ Lee, S Seo
Applied Physics Letters 91 (22), 2007
A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories
MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ...
Advanced Materials 19 (1), 73-76, 2007
Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory
MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ...
Advanced Functional Materials 19 (10), 1587-1593, 2009
2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications
MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ...
2007 IEEE International Electron Devices Meeting, 771-774, 2007
Conductivity switching characteristics and reset currents in NiO films
S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ...
Applied Physics Letters 86 (9), 2005
Improvement of resistive memory switching in NiO using IrO2
DC Kim, MJ Lee, SE Ahn, S Seo, JC Park, IK Yoo, IG Baek, HJ Kim, ...
Applied physics letters 88 (23), 2006
Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity
MJ Lee, JH Ahn, JH Sung, H Heo, SG Jeon, W Lee, JY Song, KH Hong, ...
Nature Communications 7, 12011, 2016
Effects of metal electrodes on the resistive memory switching property of NiO thin films
CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ...
Applied Physics Letters 93 (4), 2008
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo
IEEE electron device letters 26 (10), 719-721, 2005
Modeling for bipolar resistive memory switching in transition-metal oxides
JH Hur, MJ Lee, CB Lee, YB Kim, CJ Kim
Physical Review B 82 (15), 155321, 2010
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