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Co-authors
Fangyuan YangVienna University of Technology (TU Wien)Verified email at tuwien.ac.at- xuedong OuFudan UniversityVerified email at fudan.edu.cn
- Guorui ChenShanghai Jiao Tong UniversityVerified email at sjtu.edu.cn
- Vy TranWashington UniversityVerified email at go.wustl.edu
- Wen-Kai LouInstitute of Semiconductors，Chinese Academy of SciencesVerified email at semi.ac.cn
- Ruixiang FeiBeijing Institute of Technology, Washington University, University of PennsylvaniaVerified email at bit.edu.cn
- Zhiwen ShiShanghai Jiao Tong UniversityVerified email at sjtu.edu.cn
- Felipe H. da JornadaDepartment of Materials Science and Engineering, Stanford UniversityVerified email at stanford.edu
- Steven G. LouieProfessor of Physics, University of California at BerkeleyVerified email at berkeley.edu
- Diana Y. QiuYale UniversityVerified email at yale.edu
- Li YangProfessor of Physics, Washington University in St LouisVerified email at wustl.edu
- Hongliang ZhangProfessor of Physics, Fudan UniversityVerified email at fudan.edu.cn
- Jonghwan KimAssistant Professor, Department of MSE, POSTECH, Korea
