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Paola Prete
Paola Prete
Dept. of Innovation Engineering, Università del Salento, Lecce, Italy
Verified email at unisalento.it
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Cited by
Cited by
Year
Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors
EM Gallo, G Chen, M Currie, T McGuckin, P Prete, N Lovergine, B Nabet, ...
Applied Physics Letters 98 (24), 2011
1302011
Exciton spectroscopy in Se/ZnSe quantum wells
R Cingolani, P Prete, D Greco, PV Giugno, M Lomascolo, R Rinaldi, ...
Physical Review B 51 (8), 5176, 1995
1231995
Au nanoparticles prepared by physical method on Si and sapphire substrates for biosensor applications
J Spadavecchia, P Prete, N Lovergine, L Tapfer, R Rella
The Journal of Physical Chemistry B 109 (37), 17347-17349, 2005
1062005
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
P Paiano, P Prete, N Lovergine, AM Mancini
Journal of applied physics 100 (9), 2006
1032006
Recombination mechanisms and lasing in shallow Se/ZnSe quantum-well structures
R Cingolani, R Rinaldi, L Calcagnile, P Prete, P Sciacovelli, L Tapfer, ...
Physical Review B 49 (23), 16769, 1994
821994
Formation of epitaxial gold nanoislands on (100) silicon
E Piscopiello, L Tapfer, MV Antisari, P Paiano, P Prete, N Lovergine
Physical Review B—Condensed Matter and Materials Physics 78 (3), 035305, 2008
762008
On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays
Z Gu, P Prete, N Lovergine, B Nabet
Journal of Applied Physics 109 (6), 2011
622011
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene
GV Bianco, M Losurdo, MM Giangregorio, A Sacchetti, P Prete, ...
RSC advances 5 (119), 98700-98708, 2015
562015
Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires
D Wolf, H Lichte, G Pozzi, P Prete, N Lovergine
Applied Physics Letters 98 (26), 2011
542011
Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs
M Fernández, P Prete, N Lovergine, AM Mancini, R Cingolani, L Vasanelli, ...
Physical Review B 55 (12), 7660, 1997
491997
Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine
P Prete, F Marzo, P Paiano, N Lovergine, G Salviati, L Lazzarini, ...
Journal of Crystal Growth 310 (23), 5114-5118, 2008
472008
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates
A Lorusso, V Nassisi, G Congedo, N Lovergine, L Velardi, P Prete
Applied Surface Science 255 (10), 5401-5404, 2009
452009
DC-magnetron sputtering of ZnO: Al films on (00.1) Al2O3 substrates from slip-casting sintered ceramic targets
I Miccoli, R Spampinato, F Marzo, P Prete, N Lovergine
Applied Surface Science 313, 418-423, 2014
422014
Nanostructure size evolution during Au-catalysed growth by carbo-thermal evaporation of well-aligned ZnO nanowires on (100) Si
P Prete, N Lovergine, L Tapfer
Applied Physics A 88, 21-26, 2007
382007
Optimization of interface parameters and bulk properties in ZnSe‐GaAs heterostructures
A Bonanni, L Vanzetti, L Sorba, A Franciosi, M Lomascolo, P Prete, ...
Applied physics letters 66 (9), 1092-1094, 1995
381995
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ...
Journal of applied physics 81 (2), 685-692, 1997
371997
On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
G Chen, EM Gallo, J Burger, B Nabet, A Cola, P Prete, N Lovergine, ...
Applied Physics Letters 96 (22), 2010
362010
Solvent-free functionalization of carbon nanotube buckypaper with amines
EV Basiuk, IJ Ramírez-Calera, V Meza-Laguna, E Abarca-Morales, ...
Applied Surface Science 357, 1355-1368, 2015
352015
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X‐ray detector applications
N Lovergine, P Prete, L Tapfer, F Marzo, AM Mancini
Crystal Research and Technology: Journal of Experimental and Industrial …, 2005
352005
Synthesis of vertically‐aligned GaAs nanowires on GaAs/(111) Si hetero‐substrates by metalorganic vapour phase epitaxy
I Miccoli, P Prete, F Marzo, D Cannoletta, N Lovergine
Crystal Research and Technology 46 (8), 795-800, 2011
342011
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