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Seungwu Han
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ...
Nature nanotechnology 5 (2), 148-153, 2010
23962010
Development of new interatomic potentials appropriate for crystalline and liquid iron
MI Mendelev, S Han, DJ Srolovitz, GJ Ackland, DY Sun, M Asta
Philosophical magazine 83 (35), 3977-3994, 2003
15562003
Development of an interatomic potential for phosphorus impurities in α-iron
GJ Ackland, MI Mendelev, DJ Srolovitz, S Han, AV Barashev
Journal of Physics: Condensed Matter 16 (27), S2629, 2004
8442004
Magnetic ordering at the edges of graphitic fragments: Magnetic tail interactions between the edge-localized states
H Lee, YW Son, N Park, S Han, J Yu
Physical Review B—Condensed Matter and Materials Physics 72 (17), 174431, 2005
5692005
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory
MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ...
Nano letters 9 (4), 1476-1481, 2009
5032009
First-principles study on doping and phase stability of
CK Lee, E Cho, HS Lee, CS Hwang, S Han
Physical Review B—Condensed Matter and Materials Physics 78 (1), 012102, 2008
3922008
Best practices in machine learning for chemistry
N Artrith, KT Butler, FX Coudert, S Han, O Isayev, A Jain, A Walsh
Nature chemistry 13 (6), 505-508, 2021
3732021
Hydrated Manganese(II) Phosphate (Mn3(PO4)2·3H2O) as a Water Oxidation Catalyst
K Jin, J Park, J Lee, KD Yang, GK Pradhan, U Sim, D Jeong, HL Jang, ...
Journal of the American Chemical Society 136 (20), 7435-7443, 2014
3692014
Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient : <?format ?> Study
DD Cuong, B Lee, KM Choi, HS Ahn, S Han, J Lee
Physical review letters 98 (11), 115503, 2007
3532007
Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ...
Advanced Materials 20 (8), 1429-1435, 2008
3522008
Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.
J Choi, S Park, J Lee, K Hong, DH Kim, CW Moon, GD Park, J Suh, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (31), 6562-6567, 2016
3462016
First-principles study of point defects in rutile
E Cho, S Han, HS Ahn, KR Lee, SK Kim, CS Hwang
Physical Review B—Condensed Matter and Materials Physics 73 (19), 193202, 2006
2772006
Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory
SK Kim, SW Lee, JH Han, B Lee, S Han, CS Hwang
Advanced Functional Materials 20 (18), 2989-3003, 2010
2602010
Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations
K Yim, Y Yong, J Lee, K Lee, HH Nahm, J Yoo, C Lee, C Seong Hwang, ...
NPG Asia Materials 7 (6), e190-e190, 2015
2492015
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ...
Nanotechnology 22 (25), 254010, 2011
2292011
Wafer-scale transferable molybdenum disulfide thin-film catalysts for photoelectrochemical hydrogen production
KC Kwon, S Choi, K Hong, CW Moon, YS Shim, T Kim, W Sohn, JM Jeon, ...
Energy & Environmental Science 9 (7), 2240-2248, 2016
2022016
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
HS Kim, SH Jeon, JS Park, TS Kim, KS Son, JB Seon, SJ Seo, SJ Kim, ...
Scientific reports 3 (1), 1459, 2013
1942013
Density and spatial distribution of charge carriers in the intrinsic -type interface
W Son, E Cho, B Lee, J Lee, S Han
Physical Review B—Condensed Matter and Materials Physics 79 (24), 245411, 2009
1832009
Role of the localized states in field emission of carbon nanotubes
S Han, J Ihm
Physical Review B 61 (15), 9986, 2000
1762000
Interaction and ordering of vacancy defects in NiO
S Park, HS Ahn, CK Lee, H Kim, H Jin, HS Lee, S Seo, J Yu, S Han
Physical Review B—Condensed Matter and Materials Physics 77 (13), 134103, 2008
1652008
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