| Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2 H Yuan, X Wang, B Lian, H Zhang, X Fang, B Shen, G Xu, Y Xu, ... Nature nanotechnology 9 (10), 851-857, 2014 | 355 | 2014 |
| Molecular beam epitaxy growth of GaN, AlN and InN X Wang, A Yoshikawa Progress in crystal growth and characterization of materials 48, 42-103, 2004 | 222 | 2004 |
| Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition X Wang, S Yang, J Wang, M Li, X Jiang, G Du, X Liu, RPH Chang Journal of Crystal Growth 226 (1), 123-129, 2001 | 171 | 2001 |
| Proposal and achievement of novel structure InN∕ GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix A Yoshikawa, SB Che, W Yamaguchi, H Saito, XQ Wang, Y Ishitani, ... Applied Physics Letters 90 (7), 2007 | 156 | 2007 |
| High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography L Zhang, F Xu, J Wang, C He, W Guo, M Wang, B Sheng, L Lu, Z Qin, ... Scientific reports 6 (1), 35934, 2016 | 137 | 2016 |
| Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions Y Zhang, G Du, D Liu, X Wang, Y Ma, J Wang, J Yin, X Yang, X Hou, ... Journal of Crystal Growth 243 (3-4), 439-443, 2002 | 130 | 2002 |
| Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3 by metal-organic chemical vapor deposition X Yang, G Du, X Wang, J Wang, B Liu, Y Zhang, D Liu, D Liu, HC Ong, ... Journal of crystal growth 252 (1-3), 275-278, 2003 | 123 | 2003 |
| X-ray photoelectron spectroscopy study of ZnO films grown by metal-organic chemical vapor deposition Y Zhang, G Du, X Wang, W Li, X Yang, Y Ma, B Zhao, H Yang, D Liu, ... Journal of crystal growth 252 (1-3), 180-183, 2003 | 122 | 2003 |
| High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ... Applied Physics Express 5 (1), 015502, 2012 | 115 | 2012 |
| Phonon lifetimes and phonon decay in InN JW Pomeroy, M Kuball, H Lu, WJ Schaff, X Wang, A Yoshikawa Applied Physics Letters 86 (22), 2005 | 104 | 2005 |
| Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy X Wang, SB Che, Y Ishitani, A Yoshikawa Journal of applied physics 99 (7), 2006 | 92 | 2006 |
| Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy X Wang, Y Tomita, OH Roh, M Ohsugi, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 86 (1), 2005 | 89 | 2005 |
| Threading dislocations in In-polar InN films and their effects on surface morphology and electrical properties X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 90 (15), 2007 | 88 | 2007 |
| Growth and properties of Mg-doped In-polar InN films X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 90 (20), 2007 | 86 | 2007 |
| Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities X Wang, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 91 (24), 2007 | 82 | 2007 |
| High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ... Advanced Materials 28 (36), 7978-7983, 2016 | 80 | 2016 |
| Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1 (LO) modes in hexagonal InN X Wang, SB Che, Y Ishitani, A Yoshikawa Applied physics letters 89 (17), 2006 | 78 | 2006 |
| Hole mobility in Mg-doped p-type InN films X Wang, SB Che, Y Ishitani, A Yoshikawa Applied Physics Letters 92 (13), 2008 | 77 | 2008 |
| Step-flow growth of In-polar InN by molecular beam epitaxy X Wang, SB Che, Y Ishitani, A Yoshikawa Japanese journal of applied physics 45 (7L), L730, 2006 | 76 | 2006 |
| Sec‐eliminating the SARS‐CoV‐2 by AlGaN based high power deep ultraviolet light source S Liu, W Luo, D Li, Y Yuan, W Tong, J Kang, Y Wang, D Li, X Rong, ... Advanced functional materials 31 (7), 2008452, 2021 | 75 | 2021 |
