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Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ... Digest. International Electron Devices Meeting,, 247-250, 2002 | 284 | 2002 |
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 175 | 2016 |
Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique DF Canaperi, JO Chu, PD Christopher, L Huang, JA Ott, HSP Wong US Patent 6,524,935, 2003 | 150 | 2003 |
Micro electromechanical switch having self-aligned spacers RP Volant, D Angell, DF Canaperi, JT Kocis, KS Petrarca, KJ Stein, ... US Patent 6,621,392, 2003 | 148 | 2003 |
SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors LJ Huang, JO Chu, DF Canaperi, CP D’emic, RM Anderson, SJ Koester, ... Applied Physics Letters 78 (9), 1267-1269, 2001 | 145 | 2001 |
Very low effective dielectric constant interconnect structures and methods for fabricating the same DF Canaperi, TJ Dalton, SM Gates, M Krishnan, SV Nitta, ... US Patent 7,045,453, 2006 | 131 | 2006 |
Very low effective dielectric constant interconnect Structures and methods for fabricating the same DF Canaperi, TJ Dalton, SM Gates, M Krishnan, SV Nitta, ... US Patent 7,023,093, 2006 | 123 | 2006 |
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 109 | 2014 |
IEDM Tech J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ... Dig 247 (441), 2003, 2002 | 104 | 2002 |
Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding LJ Huang, JO Chu, S Goma, CP D'Emic, SJ Koester, DF Canaperi, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 103 | 2001 |
22 nm technology compatible fully functional 0.1 μm26T-SRAM cell BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 96 | 2008 |
Slurry for mechanical polishing (CMP) of metals and use thereof DF Canaperi, WJ Cote, P Feeney, M Krishnan, JC Liu, MF Lofaro, ... US Patent 6,348,076, 2002 | 94 | 2002 |
Effects of overlayers on electromigration reliability improvement for cu/low k interconnects CK Hu, D Canaperi, ST Chen, LM Gignac, B Herbst, S Kaldor, M Krishnan, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 222-228, 2004 | 73 | 2004 |
Electron and hole mobility enhancement in strained SOI by wafer bonding L Huang, JO Chu, SA Goma, CP d'Emic, SJ Koester, DF Canaperi, ... IEEE Transactions on Electron Devices 49 (9), 1566-1571, 2002 | 73 | 2002 |
Atom motion of Cu and Co in Cu damascene lines with a CoWP cap CK Hu, LM Gignac, R Rosenberg, B Herbst, S Smith, J Rubino, ... Applied physics letters 84 (24), 4986-4988, 2004 | 66 | 2004 |
Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 58 | 2016 |
Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
Ruthenium interconnect resistivity and reliability at 48 nm pitch X Zhang, H Huang, R Patlolla, W Wang, FW Mont, J Li, CK Hu, EG Liniger, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 52 | 2016 |
Slurry for mechanical polishing (CMP) of metals and use thereof MT Brigham, DF Canaperi, MA Cobb, W Cote, KM Davis, SA Estes, ... US Patent 6,812,193, 2004 | 52 | 2004 |