| Bright room temperature single photon source at telecom range in cubic silicon carbide J Wang, Y Zhou, Z Wang, A Rasmita, J Yang, X Li, HJ von Bardeleben, ... Nature communications 9 (1), 4106, 2018 | 132 | 2018 |
| Phase engineering of Cr5Te8 with colossal anomalous Hall effect B Tang, X Wang, M Han, X Xu, Z Zhang, C Zhu, X Cao, Y Yang, Q Fu, ... Nature Electronics 5 (4), 224-232, 2022 | 78 | 2022 |
| Coherent manipulation with resonant excitation and single emitter creation of nitrogen vacancy centers in 4H silicon carbide Z Mu, SA Zargaleh, HJ von Bardeleben, JE Fröch, M Nonahal, H Cai, ... Nano letters 20 (8), 6142-6147, 2020 | 64 | 2020 |
| Combined radiation effects of protons and electrons on NPN transistors X Li, H Geng, C Liu, Z Zhao, D Yang, S He IEEE Transactions on Nuclear Science 57 (2), 831-836, 2010 | 57 | 2010 |
| Interaction between hydrogen and gallium vacancies in β-Ga2O3 Y Wei, X Li, J Yang, C Liu, J Zhao, Y Liu, S Dong Scientific Reports 8 (1), 10142, 2018 | 49 | 2018 |
| Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons X Li, C Liu, E Rui, H Geng, J Yang IEEE Transactions on Nuclear Science 59 (3), 625-633, 2012 | 46 | 2012 |
| Irradiation effects on the structural and optical properties of single crystal β-Ga2O3 C Liu, Y Berencén, J Yang, Y Wei, M Wang, Y Yuan, C Xu, Y Xie, X Li, ... Semiconductor Science and Technology 33 (9), 095022, 2018 | 42 | 2018 |
| Enhanced shift currents in monolayer 2D GeS and SnS by strain-induced band gap engineering NT Kaner, Y Wei, Y Jiang, W Li, X Xu, K Pang, X Li, J Yang, YY Jiang, ... ACS omega 5 (28), 17207-17214, 2020 | 37 | 2020 |
| Degradation mechanisms of current gain in NPN transistors L Xing-Ji, G Hong-Bin, L Mu-Jie, Y De-Zhuang, H Shi-Yu, L Chao-Ming Chinese Physics B 19 (6), 066103, 2010 | 37 | 2010 |
| ElasTool: An automated toolkit for elastic constants calculation ZL Liu, CE Ekuma, WQ Li, JQ Yang, XJ Li Computer Physics Communications 270, 108180, 2022 | 35 | 2022 |
| Synergistic effect of ionization and displacement damage in NPN transistors caused by protons with various energies X Li, C Liu, J Yang IEEE Transactions on Nuclear Science 62 (3), 1375-1382, 2015 | 34 | 2015 |
| MoS2 Nanoflowers Decorated with Fe3O4/Graphite Nanosheets for Controllable Electromagnetic Wave Absorption Z Qin, C Wang, Y Ma, Z Sun, B Zhong, X Li, P Zhang ACS Applied Nano Materials 4 (4), 3434-3443, 2021 | 33 | 2021 |
| Separation of ionization traps in NPN transistors irradiated by lower energy electrons X Li, C Liu, J Yang, Y Zhao, G Liu IEEE Transactions on Nuclear Science 60 (5), 3924-3931, 2013 | 33 | 2013 |
| Displacement damage in bipolar junction transistors: Beyond Messenger-Spratt HJ Barnaby, RD Schrimpf, KF Galloway, X Li, J Yang, C Liu IEEE Transactions on Nuclear Science 64 (1), 149-155, 2016 | 32 | 2016 |
| Synergistic radiation effects on PNP transistors caused by protons and electrons X Li, C Liu, H Geng, E Rui, D Yang, S He IEEE Transactions on Nuclear Science 59 (2), 439-446, 2012 | 31 | 2012 |
| ZIF-67/GNs derived Co3O4/GNs multilayer flower and porous structure as an efficient electromagnetic wave absorbing material for excellent absorbing properties Z Qin, C Wang, YY Ma, B Zhong, X Li, P Zhang Applied Surface Science 575, 151789, 2022 | 30 | 2022 |
| Spherical shape Co@ Co3O4 core-shell composites grown on surface of graphite nanosheets with ultra-thin and excellent electromagnetic absorption performance Z Qin, C Wang, J Wang, B Zhong, X Li, X Chen, H Zhuang, P Zhang Applied Surface Science 539, 148253, 2021 | 30 | 2021 |
| The effect of ionization and displacement damage on minority carrier lifetime J Yang, X Li, C Liu, DM Fleetwood Microelectronics reliability 82, 124-129, 2018 | 28 | 2018 |
| Synergistic effects of NPN transistors caused by combined proton irradiations with different energies X Li, J Yang, C Liu, G Bai, W Luo, P Li Microelectronics reliability 82, 130-135, 2018 | 28 | 2018 |
| Single-event burnout hardness for the 4H-SiC trench-gate MOSFETs based on the multi-island buffer layer Y Wang, M Lin, XJ Li, X Wu, JQ Yang, MT Bao, CH Yu, F Cao IEEE Transactions on Electron Devices 66 (10), 4264-4272, 2019 | 27 | 2019 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
