| Phase-change random access memory: A scalable technology S Raoux, GW Burr, MJ Breitwisch, CT Rettner, YC Chen, RM Shelby, ... IBM Journal of Research and Development 52 (4.5), 465-479, 2008 | 1227 | 2008 |
| Crystal growth within a phase change memory cell A Sebastian, M Le Gallo, D Krebs Nature communications 5 (1), 4314, 2014 | 263 | 2014 |
| Threshold field of phase change memory materials measured using phase change bridge devices D Krebs, S Raoux, CT Rettner, GW Burr, M Salinga, M Wuttig Applied Physics Letters 95 (8), 2009 | 180 | 2009 |
| Projected phase-change memory devices WW Koelmans, A Sebastian, VP Jonnalagadda, D Krebs, L Dellmann, ... Nature communications 6 (1), 8181, 2015 | 179 | 2015 |
| Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells M Le Gallo, A Athmanathan, D Krebs, A Sebastian Journal of Applied Physics 119 (2), 2016 | 117 | 2016 |
| Collective structural relaxation in phase‐change memory devices M Le Gallo, D Krebs, F Zipoli, M Salinga, A Sebastian Advanced Electronic Materials 4 (9), 1700627, 2018 | 83 | 2018 |
| Structural origin of resistance drift in amorphous GeTe F Zipoli, D Krebs, A Curioni Physical Review B 93 (11), 115201, 2016 | 75 | 2016 |
| Subthreshold electrical transport in amorphous phase-change materials M Le Gallo, M Kaes, A Sebastian, D Krebs New Journal of Physics 17 (9), 093035, 2015 | 65 | 2015 |
| Defects in amorphous phase-change materials J Luckas, D Krebs, S Grothe, J Klomfaß, R Carius, C Longeaud, M Wuttig Journal of Materials Research 28 (9), 1139-1147, 2013 | 53 | 2013 |
| On the density of states of germanium telluride C Longeaud, J Luckas, D Krebs, R Carius, J Klomfass, M Wuttig Journal of Applied Physics 112 (11), 2012 | 49 | 2012 |
| The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments J Luckas, S Kremers, D Krebs, M Salinga, M Wuttig, C Longeaud Journal of Applied Physics 110 (1), 2011 | 46 | 2011 |
| Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials D Krebs, RM Schmidt, J Klomfaβ, J Luckas, G Bruns, C Schlockermann, ... Journal of non-crystalline solids 358 (17), 2412-2415, 2012 | 42 | 2012 |
| Characterization of phase change memory materials using phase change bridge devices D Krebs, S Raoux, CT Rettner, GW Burr, RM Shelby, M Salinga, ... Journal of Applied Physics 106 (5), 2009 | 42 | 2009 |
| The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells JLM Oosthoek, D Krebs, M Salinga, DJ Gravesteijn, GAM Hurkx, BJ Kooi Journal of Applied Physics 112 (8), 2012 | 38 | 2012 |
| A collective relaxation model for resistance drift in phase change memory cells A Sebastian, D Krebs, M Le Gallo, H Pozidis, E Eleftheriou 2015 IEEE International Reliability Physics Symposium, MY. 5.1-MY. 5.6, 2015 | 37 | 2015 |
| Changes in electrical transport and density of states of phase change materials upon resistance drift D Krebs, T Bachmann, P Jonnalagadda, L Dellmann, S Raoux New Journal of Physics 16 (4), 043015, 2014 | 36 | 2014 |
| Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis Y Zhang, S Raoux, D Krebs, LE Krupp, T Topuria, MA Caldwell, ... Journal of Applied Physics 104 (7), 2008 | 36 | 2008 |
| High-field electrical transport in amorphous phase-change materials M Kaes, M Le Gallo, A Sebastian, M Salinga, D Krebs Journal of Applied Physics 118 (13), 2015 | 35 | 2015 |
| Phase-change memory cells D Krebs, A Sebastian US Patent 9,293,199, 2014 | 34 | 2014 |
| Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5 J Luckas, D Krebs, M Salinga, M Wuttig, C Longeaud physica status solidi c 7 (3‐4), 852-856, 2010 | 27 | 2010 |
Abu SebastianDistinguished Scientist, IBM Research - ZurichVerified email at zurich.ibm.com
