Daniel Krebs
Daniel Krebs
ams-OSRAM International GmbH, Regensburg, Germany
Verified email at - Homepage
Cited by
Cited by
Phase-change random access memory: A scalable technology
S Raoux, GW Burr, MJ Breitwisch, CT Rettner, YC Chen, RM Shelby, ...
IBM Journal of Research and Development 52 (4.5), 465-479, 2008
Crystal growth within a phase change memory cell
A Sebastian, M Le Gallo, D Krebs
Nature communications 5 (1), 4314, 2014
Threshold field of phase change memory materials measured using phase change bridge devices
D Krebs, S Raoux, CT Rettner, GW Burr, M Salinga, M Wuttig
Applied Physics Letters 95 (8), 2009
Projected phase-change memory devices
WW Koelmans, A Sebastian, VP Jonnalagadda, D Krebs, L Dellmann, ...
Nature communications 6 (1), 8181, 2015
Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
M Le Gallo, A Athmanathan, D Krebs, A Sebastian
Journal of Applied Physics 119 (2), 2016
Collective structural relaxation in phase‐change memory devices
M Le Gallo, D Krebs, F Zipoli, M Salinga, A Sebastian
Advanced Electronic Materials 4 (9), 1700627, 2018
Structural origin of resistance drift in amorphous GeTe
F Zipoli, D Krebs, A Curioni
Physical Review B 93 (11), 115201, 2016
Subthreshold electrical transport in amorphous phase-change materials
M Le Gallo, M Kaes, A Sebastian, D Krebs
New Journal of Physics 17 (9), 093035, 2015
Defects in amorphous phase-change materials
J Luckas, D Krebs, S Grothe, J Klomfaß, R Carius, C Longeaud, M Wuttig
Journal of Materials Research 28 (9), 1139-1147, 2013
On the density of states of germanium telluride
C Longeaud, J Luckas, D Krebs, R Carius, J Klomfass, M Wuttig
Journal of Applied Physics 112 (11), 2012
Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
D Krebs, RM Schmidt, J Klomfaβ, J Luckas, G Bruns, C Schlockermann, ...
Journal of non-crystalline solids 358 (17), 2412-2415, 2012
The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments
J Luckas, S Kremers, D Krebs, M Salinga, M Wuttig, C Longeaud
Journal of Applied Physics 110 (1), 2011
Characterization of phase change memory materials using phase change bridge devices
D Krebs, S Raoux, CT Rettner, GW Burr, RM Shelby, M Salinga, ...
Journal of Applied Physics 106 (5), 2009
The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
JLM Oosthoek, D Krebs, M Salinga, DJ Gravesteijn, GAM Hurkx, BJ Kooi
Journal of Applied Physics 112 (8), 2012
A collective relaxation model for resistance drift in phase change memory cells
A Sebastian, D Krebs, M Le Gallo, H Pozidis, E Eleftheriou
2015 IEEE International Reliability Physics Symposium, MY. 5.1-MY. 5.6, 2015
Changes in electrical transport and density of states of phase change materials upon resistance drift
D Krebs, T Bachmann, P Jonnalagadda, L Dellmann, S Raoux
New Journal of Physics 16 (4), 043015, 2014
High-field electrical transport in amorphous phase-change materials
M Kaes, M Le Gallo, A Sebastian, M Salinga, D Krebs
Journal of Applied Physics 118 (13), 2015
Phase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis
Y Zhang, S Raoux, D Krebs, LE Krupp, T Topuria, MA Caldwell, ...
Journal of Applied Physics 104 (7), 2008
Phase-change memory cells
D Krebs, A Sebastian
US Patent 9,293,199, 2014
Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5
J Luckas, D Krebs, M Salinga, M Wuttig, C Longeaud
physica status solidi c 7 (3‐4), 852-856, 2010
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