| Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD A Siddique, R Ahmed, J Anderson, M Nazari, L Yates, S Graham, M Holtz, ... ACS Applied Electronic Materials 1 (8), 1387-1399, 2019 | 40 | 2019 |
| Integration of GaN and diamond using epitaxial lateral overgrowth R Ahmed, A Siddique, J Anderson, C Gautam, M Holtz, E Piner ACS applied materials & interfaces 12 (35), 39397-39404, 2020 | 25 | 2020 |
| Selective area deposition of hot filament CVD diamond on 100 mm MOCVD grown AlGaN/GaN wafers R Ahmed, A Siddique, J Anderson, C Engdahl, M Holtz, E Piner Crystal Growth & Design 19 (2), 672-677, 2019 | 21 | 2019 |
| Rheological and morphological characterization of Styrene-Isoprene-Styrene (SIS) modified asphalt binder M Mazumder, A Siddique, R Ahmed, SJ Lee, MS Lee Advances in Civil Engineering 2020, 1-13, 2020 | 16 | 2020 |
| Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer A Siddique, R Ahmed, J Anderson, M Holtz, EL Piner ACS Applied Materials & Interfaces 13 (15), 18264-18273, 2021 | 15 | 2021 |
| Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs A Siddique, R Ahmed, J Anderson, EL Piner Journal of Crystal Growth 517, 28-34, 2019 | 10 | 2019 |
| Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate R Ahmed, A Siddique, R Saha, J Anderson, C Engdahl, M Holtz, E Piner Journal of Materials Science: Materials in Electronics 31, 8597-8606, 2020 | 8 | 2020 |
| Growth and characterization of (Ga1−xGdx)2O3 by pulsed laser deposition for wide bandgap applications MD Mia, BC Samuels, PD Borges, L Scolfaro, A Siddique, JK Saha, ... Applied Physics A 128 (5), 366, 2022 | 3 | 2022 |
| HAADF-STEM study of filament material in hot filament CVD diamond films J Anderson, R Ahmed, A Siddique, EL Piner Microscopy and Microanalysis 25 (S2), 1788-1789, 2019 | 3 | 2019 |
| Preferentially oriented growth of diamond films on silicon with nickel interlayer A KC, A Siddique, J Anderson, R Saha, C Gautam, A Ayala, C Engdahl, ... SN Applied Sciences 4 (8), 226, 2022 | 2 | 2022 |
| Low temperature ferromagnetic behavior and temperature dependent anomalous dielectric relaxation of Zn0.90Ni0.05Mn0.05O diluted magnetic semiconductor A Raju, A Siddique, ASM Moslehuddin, ZH Mahmood, AKMA Hossain Journal of Materials Science. Materials in Electronics 29 (10), 8244-8257, 2018 | | 2018 |
| Chemical vapor deposition of diamond on GaN using MOCVD grown in-situ SiNx as dielectric adhesion layer EP Anwar Siddique, Raju Ahmed, Jonathan Anderson, Mohammad Nazari, Mark Holtz The 12th International New Diamond and Nano Carbons Conference (NDNC 2018 …, 2018 | | 2018 |
| Selective deposition of polycrystalline diamond film on Si, SiNx, SiO2, AlN, GaN and Ti surface using hot filament chemical vapor deposition R Ahmed, A Siddique, J Anderson, M Holtz, E Piner APS March Meeting Abstracts 2018, V17. 005, 2018 | | 2018 |
Raju Ahmed, Ph. D.Sr R&D Engineer at Micron TechnologyVerified email at micron.com
