Kerstin Volz
Kerstin Volz
Professor of Physics
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Cited by
GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration
K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz
Journal of Crystal Growth 315 (1), 37-47, 2011
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ...
Physical Review B 64 (12), 121203, 2001
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I Németh, B Kunert, W Stolz, K Volz
Journal of Crystal Growth 310 (7-9), 1595-1601, 2008
Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate
S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ...
Applied Physics Letters 99 (7), 2011
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 2013
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate
B Kunert, I Németh, S Reinhard, K Volz, W Stolz
Thin Solid Films 517 (1), 140-143, 2008
A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
NW Rosemann, JP Eußner, A Beyer, SW Koch, K Volz, S Dehnen, ...
Science 352 (6291), 1301-1304, 2016
Direct-band-gap Ga (NAsP)-material system pseudomorphically grown on GaP substrate
B Kunert, K Volz, J Koch, W Stolz
Applied Physics Letters 88 (18), 2006
Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
C Liu, B Mensching, M Zeitler, K Volz, B Rauschenbach
Physical Review B 57 (4), 2530, 1998
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon
F Dimroth, T Roesener, S Essig, C Weuffen, A Wekkeli, E Oliva, G Siefer, ...
IEEE Journal of Photovoltaics 4 (2), 620-625, 2014
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O Rubel, M Galluppi, SD Baranovskii, K Volz, L Geelhaar, H Riechert, ...
Journal of applied physics 98 (6), 2005
Lattice expansion of Ca and Ar ion implanted GaN
C Liu, B Mensching, K Volz, B Rauschenbach
Applied physics letters 71 (16), 2313-2315, 1997
GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz
Journal of Applied Physics 111 (8), 2012
The role of Sb in the MBE growth of (GaIn)(NAsSb)
K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris
Journal of Crystal Growth 251 (1-4), 360-366, 2003
Monolithic integration of Ga (NAsP)/(BGa) P multi-quantum well structures on (0 0 1) silicon substrate by MOVPE
B Kunert, S Zinnkann, K Volz, W Stolz
Journal of crystal growth 310 (23), 4776-4779, 2008
Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors
T You, N Du, S Slesazeck, T Mikolajick, G Li, D Bürger, I Skorupa, ...
ACS applied materials & interfaces 6 (22), 19758-19765, 2014
Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
K Volz, D Lackner, I Nemeth, B Kunert, W Stolz, C Baur, F Dimroth, ...
Journal of Crystal Growth 310 (7-9), 2222-2228, 2008
Spin injection, spin transport and spin coherence
M Oestreich, M Bender, J Hübner, D Hägele, WW Rühle, T Hartmann, ...
Semiconductor science and technology 17 (4), 285, 2002
The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–xyCoxMny)O2 Cathode Materials
S Ahmed, A Pokle, S Schweidler, A Beyer, M Bianchini, F Walther, ...
ACS nano 13 (9), 10694-10704, 2019
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