Igor Beinik
Igor Beinik
Research Engineer, MAX IV, Lund University
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Cited by
Cited by
Enhanced wetting of Cu on ZnO by migration of subsurface oxygen vacancies
I Beinik, M Hellström, TN Jensen, P Broqvist, JV Lauritsen
Nature Communications 6 (1), 8845, 2015
Electrical properties of ZnO nanorods studied by conductive atomic force microscopy
I Beinik, M Kratzer, A Wachauer, L Wang, RT Lechner, C Teichert, C Motz, ...
Journal of applied physics 110 (5), 2011
Water Dissociation and Hydroxyl Ordering on Anatase
I Beinik, A Bruix, Z Li, KC Adamsen, S Koust, B Hammer, S Wendt, ...
Physical review letters 121 (20), 206003, 2018
Single-layer MoS 2 formation by sulfidation of molybdenum oxides in different oxidation states on Au (111)
N Salazar, I Beinik, JV Lauritsen
Physical Chemistry Chemical Physics 19 (21), 14020-14029, 2017
Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFM
I Beinik, M Kratzer, A Wachauer, L Wang, YP Piryatinski, G Brauer, ...
Beilstein journal of nanotechnology 4 (1), 208-217, 2013
Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications
B Galiana, I Rey-Stolle, I Beinik, C Algora, C Teichert, ...
Solar energy materials and solar cells 95 (7), 1949-1954, 2011
Conductive atomic-force microscopy investigation of nanostructures in microelectronics
C Teichert, I Beinik
Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, 691-721, 2010
Surface planarization and masked ion-beam structuring of YBa2Cu3O7 thin films
JD Pedarnig, K Siraj, MA Bodea, I Puica, W Lang, R Kolarova, P Bauer, ...
Thin Solid Films 518 (23), 7075-7080, 2010
Subsurface hydrogen bonds at the polar Zn-terminated ZnO (0001) surface
M Hellström, I Beinik, P Broqvist, JV Lauritsen, K Hermansson
Physical Review B 94 (24), 245433, 2016
Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110)
P Tejedor, L Díez-Merino, I Beinik, C Teichert
Applied physics letters 95 (12), 2009
Ion beam irradiation of cuprate high-temperature superconductors: Systematic modification of the electrical properties and fabrication of nanopatterns
W Lang, M Marksteiner, MA Bodea, K Siraj, JD Pedarnig, R Kolarova, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012
Coverage-dependent oxidation and reduction of vanadium supported on anatase TiO2 (1 0 1)
S Koust, BN Reinecke, KC Adamsen, I Beinik, K Handrup, Z Li, PG Moses, ...
Journal of catalysis 360, 118-126, 2018
Facile embedding of single vanadium atoms at the anatase TiO 2 (101) surface
S Koust, L Arnarson, PG Moses, Z Li, I Beinik, JV Lauritsen, S Wendt
Physical Chemistry Chemical Physics 19 (14), 9424-9431, 2017
Scanning probe microscopy in nanoscience and nanotechnology 2
C Teichert, I Beinik, B Bhushan
Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, 691-721, 2011
Step edge structures on the anatase TiO 2 (001) surface studied by atomic-resolution TEM and STM
M Ek, I Beinik, A Bruix, S Wendt, JV Lauritsen, S Helveg
Faraday discussions 208, 325-338, 2018
Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methods
G Brauer, W Anwand, D Grambole, W Egger, P Sperr, I Beinik, L Wang, ...
physica status solidi c 6 (11), 2556-2560, 2009
Electrical and photovoltaic properties of self-assembled Ge nanodomes on Si (001)
M Kratzer, M Rubezhanska, C Prehal, I Beinik, SV Kondratenko, ...
Physical Review B 86 (24), 245320, 2012
Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge
I Beinik, B Galiana, M Kratzer, C Teichert, I Rey-Stolle, C Algora, ...
Journal of Vacuum Science & Technology B 28 (4), C5G5-C5G10, 2010
Soft/MAX-A new Soft X-ray Microscopy and Coherent Imaging Beamline at the MAX IV Facility.
J Schwenke, K Thanell, I Beinik, L Roslund, T Tyliszczak
Microscopy and Microanalysis 24 (S2), 232-233, 2018
KCl ultra-thin films with polar and non-polar surfaces grown on Si (111) 7× 7
I Beinik, C Barth, M Hanbücken, L Masson
Scientific Reports 5 (1), 8223, 2015
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