| Measurement of ultrafast carrier dynamics in epitaxial graphene JM Dawlaty, S Shivaraman, M Chandrashekhar, F Rana, MG Spencer Applied Physics Letters 92 (4), 2008 | 931 | 2008 |
| Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ... Nano letters 8 (12), 4248-4251, 2008 | 795 | 2008 |
| Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ... Applied Physics Letters 93 (13), 2008 | 635 | 2008 |
| Ultrafast relaxation dynamics of hot optical phonons in graphene H Wang, JH Strait, PA George, S Shivaraman, VB Shields, ... Applied Physics Letters 96 (8), 2010 | 355 | 2010 |
| Free-standing epitaxial graphene S Shivaraman, RA Barton, X Yu, J Alden, L Herman, ... Nano letters 9 (9), 3100-3105, 2009 | 286 | 2009 |
| Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene F Rana, PA George, JH Strait, J Dawlaty, S Shivaraman, ... Physical Review B 79 (11), 115447, 2009 | 284 | 2009 |
| Demonstration of a 4H SiC betavoltaic cell MVS Chandrashekhar, CI Thomas, H Li, MG Spencer, A Lal Applied Physics Letters 88 (3), 2006 | 222 | 2006 |
| Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity NBS Ekaterina A. Dolgopolova, Amy J. Brandt, Otega A. Ejegbavwo, Audrey S ... Journal of the American Chemical Society 139 (14), 5201-5209, 2017 | 193 | 2017 |
| Thickness estimation of epitaxial graphene on SiC using attenuation of substrate Raman intensity S Shivaraman, MVS Chandrashekhar, JJ Boeckl, MG Spencer Journal of electronic materials 38, 725-730, 2009 | 171 | 2009 |
| Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study C Coletti, S Forti, A Principi, KV Emtsev, AA Zakharov, KM Daniels, ... Physical Review B 88 (15), 155439, 2013 | 121 | 2013 |
| Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ... Nanotechnology 17 (5), 1264, 2006 | 89 | 2006 |
| High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates S Muhtadi, SM Hwang, A Coleman, F Asif, G Simin, MVS Chandrashekhar, ... IEEE Electron Device Letters 38 (7), 914-917, 2017 | 67 | 2017 |
| High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor I Chowdhury, MVS Chandrasekhar, PB Klein, JD Caldwell, T Sudarshan Journal of Crystal Growth 316 (1), 60-66, 2011 | 66 | 2011 |
| Betavoltaic cell MVS Chandrashekhar, CI Thomas, MG Spencer US Patent 7,663,288, 2010 | 54 | 2010 |
| Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: on the growth of multilayer films BK Daas, SU Omar, S Shetu, KM Daniels, S Ma, TS Sudarshan, ... Crystal growth & design 12 (7), 3379-3387, 2012 | 51 | 2012 |
| High power density betavoltaic battery M Spencer, MVS Chandrashekhar US Patent 8,487,392, 2013 | 42 | 2013 |
| Interface trap-induced nonideality in as-deposited Ni/4H-SiC Schottky barrier diode SU Omar, TS Sudarshan, TA Rana, H Song, MVS Chandrashekhar IEEE Transactions on Electron Devices 62 (2), 615-621, 2014 | 40 | 2014 |
| Emission of terahertz radiation from SiC JH Strait, PA George, J Dawlaty, S Shivaraman, M Chandrashekhar, ... Applied Physics Letters 95 (5), 2009 | 40 | 2009 |
| Synthesis and properties of high-quality InN nanowires and nanonetworks Z Cai, S Garzon, MVS Chandrashekhar, RA Webb, G Koley Journal of electronic materials 37, 585-592, 2008 | 38 | 2008 |
| Polariton enhanced infrared reflection of epitaxial graphene BK Daas, KM Daniels, TS Sudarshan, MVS Chandrashekhar Journal of applied physics 110 (11), 2011 | 36 | 2011 |
Michael SpencerCornell University OR Howard Universtiy OR Morgan State UniversityVerified email at ece.cornell.edu
