Igor Stolichnov
Igor Stolichnov
EPFL (École Polytechnique Fédérale de Lausanne), Lausanne, Switzerland
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Ferroelectric thin films: Review of materials, properties, and applications
N Setter, D Damjanovic, L Eng, G Fox, S Gevorgian, S Hong, A Kingon, ...
Journal of applied physics 100 (5), 2006
Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
AK Tagantsev, I Stolichnov, EL Colla, N Setter
Journal of Applied Physics 90 (3), 1387-1402, 2001
Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films
AK Tagantsev, I Stolichnov, N Setter, JS Cross, M Tsukada
Physical Review B 66 (21), 214109, 2002
Injection-controlled size effect on switching of ferroelectric thin films
AK Tagantsev, IA Stolichnov
Applied Physics Letters 74 (9), 1326-1328, 1999
Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn) As
I Stolichnov, SWE Riester, HJ Trodahl, N Setter, AW Rushforth, ...
Nature materials 7 (6), 464-467, 2008
Space-charge influenced-injection model for conduction in thin films
I Stolichnov, A Tagantsev
Journal of applied physics 84 (6), 3216-3225, 1998
Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ...
Advanced Materials Interfaces 6 (11), 1900042, 2019
Top-interface-controlled switching and fatigue endurance of ferroelectric capacitors
I Stolichnov, A Tagantsev, N Setter, JS Cross, M Tsukada
Applied physics letters 74 (23), 3552-3554, 1999
Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories
AK Tagantsev, I Stolichnov, N Setter, JS Cross
Journal of Applied Physics 96 (11), 6616-6623, 2004
Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: An experimentally calibrated simulation study of device performance
A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu
IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016
Control of leakage conduction of high-fatigue-endurance film ferroelectric capacitors with electrodes
I Stolichnov, A Tagantsev, N Setter, JS Cross, M Tsukada
Applied physics letters 75 (12), 1790-1792, 1999
Controlled stripes of ultrafine ferroelectric domains
L Feigl, P Yudin, I Stolichnov, T Sluka, K Shapovalov, M Mtebwa, ...
Nature communications 5 (1), 4677, 2014
Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study
A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ...
IEEE electron device letters 38 (10), 1485-1488, 2017
Bent ferroelectric domain walls as reconfigurable metallic-like channels
I Stolichnov, L Feigl, LJ McGilly, T Sluka, XK Wei, E Colla, A Crassous, ...
Nano letters 15 (12), 8049-8055, 2015
Long-term retention in organic ferroelectric-graphene memories
S Raghavan, I Stolichnov, N Setter, JS Heron, M Tosun, A Kis
Applied Physics Letters 100 (2), 2012
Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects
A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ...
Nano letters 20 (5), 3255-3262, 2020
Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN∕ GaN heterostructures
I Stolichnov, L Malin, P Muralt, N Setter
Applied physics letters 88 (4), 2006
Persistent conductive footprints of 109 domain walls in bismuth ferrite films
I Stolichnov, M Iwanowska, E Colla, B Ziegler, I Gaponenko, P Paruch, ...
Applied Physics Letters 104 (13), 2014
Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb (Zr, Ti) O3 films
I Stolichnov, L Malin, E Colla, AK Tagantsev, N Setter
Applied Physics Letters 86 (1), 2005
Thermally induced cooperative molecular reorientation and nanoscale polarization switching behaviors of ultrathin poly (vinylidene fluoride-trifluoroethylene) films
D Guo, I Stolichnov, N Setter
The journal of physical chemistry B 115 (46), 13455-13466, 2011
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