| High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate S Xu, W Wang, YC Huang, Y Dong, S Masudy-Panah, H Wang, X Gong, ... Optics express 27 (4), 5798-5813, 2019 | 111 | 2019 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017 | 98 | 2017 |
| High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ... Optics express 28 (7), 10280-10293, 2020 | 84 | 2020 |
| Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity S Samanta, U Chand, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ... IEEE Electron Device Letters 41 (6), 856-859, 2020 | 53 | 2020 |
| GeSn lateral pin photodetector on insulating substrate S Xu, YC Huang, KH Lee, W Wang, Y Dong, D Lei, S Masudy-Panah, ... Optics express 26 (13), 17312-17321, 2018 | 40 | 2018 |
| High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ... Optics express 26 (8), 10305-10314, 2018 | 37 | 2018 |
| Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ... Optics express 27 (19), 26924-26939, 2019 | 35 | 2019 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 32 | 2017 |
| Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 31 | 2018 |
| Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Y Kang, S Xu, K Han, EYJ Kong, Z Song, S Luo, A Kumar, C Wang, W Fan, ... Nano letters 21 (13), 5555-5563, 2021 | 30 | 2021 |
| Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate H Zhou, S Xu, S Wu, YC Huang, P Zhao, J Tong, B Son, X Guo, D Zhang, ... Optics Express 28 (23), 34772-34786, 2020 | 30 | 2020 |
| High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection S Wu, S Xu, H Zhou, Y Jin, Q Chen, YC Huang, L Zhang, X Gong, CS Tan IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 22 | 2021 |
| First demonstration of complementary FinFETs and tunneling FinFETs co-integrated on a 200 mm GeSnOI substrate: A pathway towards future hybrid nano-electronics systems K Han, Y Wu, YC Huang, S Xu, A Kumar, E Kong, Y Kang, J Zhang, ... 2019 Symposium on VLSI Technology, T182-T183, 2019 | 11 | 2019 |
| GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,intof 900 µS/µm, and High-Field µeffof 275 cm … D Lei, K Han, KH Lee, YC Huang, W Wang, S Yadav, A Kumar, Y Wu, ... 2018 IEEE Symposium on VLSI Technology, 197-198, 2018 | 11 | 2018 |
| Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10Ω-cm2 Y Wu, W Wang, S Masudy-Panah, Y Li, K Han, L He, Z Zhang, D Lei, S Xu, ... 2018 IEEE Symposium on VLSI Technology, 77-78, 2018 | 11 | 2018 |
| High field temperature-independent field-effect mobility of amorphous indium–gallium–zinc oxide thin-film transistors: Understanding the importance of equivalent-oxide … K Han, S Samanta, S Xu, Y Wu, X Gong IEEE Transactions on Electron Devices 68 (1), 118-124, 2020 | 10 | 2020 |
| Strain relaxation of germanium-tin (GeSn) fins Y Kang, YC Huang, KH Lee, S Bao, W Wang, D Lei, S Masudy-Panah, ... AIP Advances 8 (2), 2018 | 10 | 2018 |
| Unipolar n-type conduction in black phosphorus induced by atomic layer deposited MgO L Wang, W Liao, S Xu, X Gong, C Zhu, KW Ang IEEE Electron Device Letters 40 (3), 471-474, 2019 | 9 | 2019 |
| A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface Q Chen, H Zhou, S Xu, YC Huang, S Wu, KH Lee, X Gong, CS Tan ACS nano 17 (13), 12151-12159, 2023 | 6 | 2023 |
| The first GeSn gate-all-around nanowire P-FET on the GeSnOI substrate with channel length of 20 nm and subthreshold swing of 74 mV/decade Y Kang, K Han, EYJ Kong, D Lei, S Xu, Y Wu, YC Huang, X Gong 2019 International Symposium on VLSI Technology, Systems and Application …, 2019 | 6 | 2019 |
