| Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Y Sun, K Zhou, Q Sun, J Liu, M Feng, Z Li, Y Zhou, L Zhang, D Li, S Zhang, ... Nature Photonics 10 (9), 595-599, 2016 | 218 | 2016 |
| Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si Y Sun, K Zhou, M Feng, Z Li, Y Zhou, Q Sun, J Liu, L Zhang, D Li, X Sun, ... Light: Science & Applications 7 (1), 13, 2018 | 115 | 2018 |
| Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi Applied Physics Letters 116 (15), 2020 | 57 | 2020 |
| Monolayer GaN excitonic deep ultraviolet light emitting diodes Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ... Applied Physics Letters 116 (1), 013101 (Cover Article), 2020 | 47 | 2020 |
| N-polar ScAlN and HEMTs grown by molecular beam epitaxy P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ... Applied Physics Letters 119 (8), 2021 | 38 | 2021 |
| Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ... Optics letters 44 (23), 5679-5682, 2019 | 37 | 2019 |
| N-polar InGaN Nanowires: Breaking the Efficiency Bottleneck of Nano and Micro LEDs X Liu*, Y Sun*, Y Malhotra, A Pandey, P Wang, Y Wu, K Sun, Z Mi Photonics Research 10 (2), 587-593 (Editors' Pick), 2022 | 32 | 2022 |
| Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ... Applied Physics Letters 116 (17), 2020 | 32 | 2020 |
| Effects of current crowding on light extraction efficiency of conventional GaN-based light-emitting diodes B Cao, S Li, R Hu, S Zhou, Y Sun, Z Gan, S Liu Optics Express 21 (21), 25381-25388, 2013 | 32 | 2013 |
| Oxygen defect dominated photoluminescence emission of ScxAl1− xN grown by molecular beam epitaxy P Wang, B Wang, DA Laleyan, A Pandey, Y Wu, Y Sun, X Liu, Z Deng, ... Applied Physics Letters 118 (3), 2021 | 28 | 2021 |
| Submicron full‐color LED pixels for microdisplays and micro‐LED main displays X Liu, Y Wu, Y Malhotra, Y Sun, YH Ra, R Wang, M Stevenson, ... Journal of the Society for Information Display 28 (5), 410-417, 2020 | 25 | 2020 |
| Controlling defect formation of nanoscale AlN: toward efficient current conduction of ultrawide‐bandgap semiconductors Y Wu, DA Laleyan, Z Deng, C Ahn, AF Aiello, A Pandey, X Liu, P Wang, ... Advanced Electronic Materials 6 (9), 2000337, 2020 | 24 | 2020 |
| Micrometer scale InGaN green light emitting diodes with ultra-stable operation X Liu, Y Wu, Y Malhotra, Y Sun, Z Mi Applied Physics Letters 117 (1), 2020 | 23 | 2020 |
| Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency W Shin, A Pandey, X Liu, Y Sun, Z Mi Optics express 27 (26), 38413-38420, 2019 | 22 | 2019 |
| A light-tolerant wireless neural recording IC for motor prediction with near-infrared-based power and data telemetry J Lim, J Lee, E Moon, M Barrow, G Atzeni, JG Letner, JT Costello, ... IEEE journal of solid-state circuits 57 (4), 1061-1074, 2022 | 20 | 2022 |
| High efficiency InGaN nanowire tunnel junction green micro-LEDs X Liu*, Y Sun*, Y Malhotra, A Pandey, Y Wu, K Sun, Z Mi Applied Physics Letters 119 (14), 141110, 2021 | 20 | 2021 |
| Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction Y Xiao, S Vanka, TA Pham, WJ Dong, Y Sun, X Liu, IA Navid, JB Varley, ... Nano Letters 22 (6), 2236−2243, 2022 | 13 | 2022 |
| Demonstration of green and UV wavelength high Q aluminum nitride on sapphire microring resonators integrated with microheaters W Shin, Y Sun, M Soltani, Z Mi Applied Physics Letters 118 (21), 2021 | 9 | 2021 |
| Monolithic integration of multicolor InGaN LEDs with uniform luminescence emission X Liu, Y Sun, Y Malhotra, Y Wu, Z Mi Optics Express 29 (21), 32826-32832, 2021 | 7 | 2021 |
| Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth K Zhou, M Ikeda, J Liu, Z Li, Y Ma, S Gao, H Ren, C Tang, Y Sun, Q Sun, ... International Conference on Optoelectronics and Microelectronics Technology …, 2017 | 7 | 2017 |
