Follow
Adra Carr
Adra Carr
Verified email at lanl.gov
Title
Cited by
Cited by
Year
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 Symposium on VLSI Technology, T230-T231, 2017
5872017
Collapse of long-range charge order tracked by time-resolved photoemission at high momenta
T Rohwer, S Hellmann, M Wiesenmayer, C Sohrt, A Stange, B Slomski, ...
Nature 471 (7339), 490-493, 2011
4942011
Time-domain classification of charge-density-wave insulators
S Hellmann, T Rohwer, M Kalläne, K Hanff, C Sohrt, A Stange, A Carr, ...
Nature communications 3 (1), 1069, 2012
3272012
Tomographic reconstruction of circularly polarized high-harmonic fields: 3D attosecond metrology
C Chen, Z Tao, C Hernández-García, P Matyba, A Carr, R Knut, O Kfir, ...
Science Advances 2 (2), e1501333, 2016
1312016
Time-and angle-resolved photoemission spectroscopy with optimized high-harmonic pulses using frequency-doubled Ti: Sapphire lasers
S Eich, A Stange, AV Carr, J Urbancic, T Popmintchev, M Wiesenmayer, ...
Journal of Electron Spectroscopy and Related Phenomena 195, 231-236, 2014
1182014
Distinguishing attosecond electron–electron scattering and screening in transition metals
C Chen, Z Tao, A Carr, P Matyba, T Szilvási, S Emmerich, M Piecuch, ...
Proceedings of the National Academy of Sciences 114 (27), E5300-E5307, 2017
772017
Self-amplified photo-induced gap quenching in a correlated electron material
S Mathias, S Eich, J Urbancic, S Michael, AV Carr, S Emmerich, A Stange, ...
Nature communications 7 (1), 12902, 2016
672016
Tungsten and cobalt metallization: A material study for MOL local interconnects
V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ...
2016 IEEE International Interconnect Technology Conference/Advanced …, 2016
522016
Laser damage growth in fused silica with simultaneous 351nm and 1053nm irradiation
MA Norton, AV Carr, CW Carr, EE Donohue, MD Feit, WG Hollingsworth, ...
Laser-Induced Damage in Optical Materials: 2008 7132, 454-461, 2008
522008
Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm
H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018
342018
Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study
NA Lanzillo, H Dixit, E Milosevic, C Niu, AV Carr, P Oldiges, MV Raymond, ...
Journal of Applied Physics 123 (15), 154303, 2018
322018
Contacts in advanced CMOS: History and emerging challenges
C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ...
ECS Transactions 77 (5), 59, 2017
302017
Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
N Breil, A Carr, T Kuratomi, C Lavoie, IC Chen, M Stolfi, KD Chiu, W Wang, ...
2017 Symposium on VLSI Technology, T216-T217, 2017
222017
IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC, AMC)
V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ...
Piscataway, NJ (IEEE) p, 2016
172016
Controlling the electronic structure of graphene using surface-adsorbate interactions
P Matyba, A Carr, C Chen, DL Miller, G Peng, S Mathias, M Mavrikakis, ...
Physical Review B 92 (4), 041407, 2015
162015
Formation of wrap-around-contact to reduce contact resistivity
A Carr, J Zhang, CH Lee, T Ando, P Hashemi
US Patent 10,586,872, 2020
132020
External resistance reduction by nanosecond laser anneal in Si/SiGe CMOS technology
O Gluschenkov, H Wu, K Brew, C Niu, L Yu, Y Sulehria, S Choi, C Durfee, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2018
112018
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
H Wu, SC Seo, C Niu, W Wang, G Tsutsui, O Gluschenkov, Z Liu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2017
112017
First-principles investigations of TiGe/Ge interface and recipes to reduce the contact resistance
H Dixit, C Niu, M Raymond, V Kamineni, RK Pandey, A Konar, ...
IEEE Transactions on Electron Devices 64 (9), 3775-3780, 2017
112017
Cover slip external cavity diode laser
AV Carr, YH Sechrest, SR Waitukaitis, JD Perreault, VPA Lonij, AD Cronin
Review of Scientific Instruments 78 (10), 106108, 2007
102007
The system can't perform the operation now. Try again later.
Articles 1–20