Yun Daniel Park
Yun Daniel Park
Professor of Physics & Astronomy, Seoul National University
Verified email at - Homepage
Cited by
Cited by
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
A Group-IV Ferromagnetic Semiconductor: MnxGe1−x
YD Park, AT Hanbicki, SC Erwin, CS Hellberg, JM Sullivan, JE Mattson, ...
Science 295 (5555), 651-654, 2002
Robust electrical spin injection into a semiconductor heterostructure
BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou
Physical Review B 62 (12), 8180, 2000
Advances in wide bandgap materials for semiconductor spintronics
SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ...
Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
Bright visible light emission from graphene
YD Kim, H Kim, Y Cho, JH Ryoo, CH Park, P Kim, YS Kim, S Lee, Y Li, ...
Nature nanotechnology 10 (8), 676-681, 2015
Ferromagnetism in cobalt-implanted ZnO
DP Norton, ME Overberg, SJ Pearton, K Pruessner, JD Budai, LA Boatner, ...
Applied Physics Letters 83 (26), 5488-5490, 2003
Critical thickness of ultrathin ferroelectric films
YS Kim, DH Kim, JD Kim, YJ Chang, TW Noh, JH Kong, K Char, YD Park, ...
Applied Physics Letters 86 (10), 102907, 2005
Magnetoresistance of Mn: Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix
YD Park, A Wilson, AT Hanbicki, JE Mattson, T Ambrose, G Spanos, ...
Applied Physics Letters 78 (18), 2739-2741, 2001
Effects of metal electrodes on the resistive memory switching property of NiO thin films
CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ...
Applied Physics Letters 93 (4), 042115, 2008
Wide bandgap GaN-based semiconductors for spintronics
SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
The role of external defects in chemical sensing of graphene field-effect transistors
B Kumar, K Min, M Bashirzadeh, AB Farimani, MH Bae, D Estrada, ...
Nano letters 13 (5), 1962-1968, 2013
Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering in Spin-Polarized Light-Emitting Diodes
RM Stroud, AT Hanbicki, YD Park, G Kioseoglou, AG Petukhov, BT Jonker, ...
Physical review letters 89 (16), 166602, 2002
Ferromagnetism in Co-and Mn-doped ZnO
NA Theodoropoulou, AF Hebard, DP Norton, JD Budai, LA Boatner, ...
Solid-State Electronics 47 (12), 2231-2235, 2003
Magnetic and structural properties of Co, Cr, V ion-implanted GaN
JS Lee, JD Lim, ZG Khim, YD Park, SJ Pearton, SNG Chu
Journal of applied physics 93 (8), 4512-4516, 2003
Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates
MJ Lee, CB Lee, S Kim, H Yin, J Park, SE Ahn, BS Kang, KH Kim, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition
YS Kim, JH Lee, YD Kim, SK Jerng, K Joo, E Kim, J Jung, E Yoon, ...
Nanoscale 5 (3), 1221-1226, 2013
Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes
BT Jonker, AT Hanbicki, YD Park, G Itskos, M Furis, G Kioseoglou, ...
Applied Physics Letters 79 (19), 3098-3100, 2001
Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
CB Lee, BS Kang, MJ Lee, SE Ahn, G Stefanovich, WX Xianyu, KH Kim, ...
Applied Physics Letters 91 (8), 082104, 2007
Magnetoresistance of NiMnSb-based multilayers and spin valves
JA Caballero, YD Park, JR Childress, J Bass, WC Chiang, AC Reilly, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998
The system can't perform the operation now. Try again later.
Articles 1–20