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Kazimieras Nomeika
Kazimieras Nomeika
Institute of Photonics and Nanotechnology
Verified email at ff.vu.lt
Title
Cited by
Cited by
Year
Carrier dynamics in blue and green emitting InGaN MQWs
R Aleksiejūnas, K Nomeika, S Miasojedovas, S Nargelas, T Malinauskas, ...
physica status solidi (b) 252 (5), 977-982, 2015
152015
Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited -Plane and -Plane (,) Quantum Wells
R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas, L Kuritzky, C Lynsky, ...
Physical Review Applied 14 (5), 054043, 2020
122020
Direct Auger recombination and density-dependent hole diffusion in InN
R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ...
Scientific reports 8 (1), 4621, 2018
102018
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ...
Journal of Crystal Growth 459, 173-177, 2017
102017
Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures
K Nomeika, R Aleksiejūnas, S Miasojedovas, R Tomašiūnas, ...
Journal of Luminescence 188, 301-306, 2017
72017
Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures
K Nomeika, Ž Podlipskas, M Nikitina, S Nargelas, G Tamulaitis, ...
Journal of Materials Chemistry C 10 (5), 1735-1745, 2022
52022
Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs
J Mickevičius, K Nomeika, M Dmukauskas, A Kadys, S Nargelas, ...
Vacuum 183, 109871, 2021
42021
Photoluminescence features and carrier dynamics in InGaN heterostructures with wide staircase interlayers and differently shaped quantum wells
A Kadys, T Malinauskas, M Dmukauskas, I Reklaitis, K Nomeika, ...
Lithuanian Journal of Physics 54 (3), 2014
32014
Novel ways of improving quantum efficiency of InGaN LED active layers by controlling carrier diffusivity
K Nomeika
Vilniaus universitetas, 2019
12019
Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth
K Nomeika, M Dmukauskas, R Aleksiejūnas, P Ščajev, S Miasojedovas, ...
Lithuanian Journal of Physics 55 (4), 2015
12015
Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs
J Mickevičius, E Valkiūnaitė, Ž Podlipskas, K Nomeika, S Nargelas, ...
Journal of Luminescence 257, 119732, 2023
2023
Research of non-equilibrium charge carrier dynamics in GaN films with varying impurity densities
M Auruškevičius, K Nomeika
Open readings 2023: 66th international conference for students of physics …, 2023
2023
Kiek dislokacijų galima sutalpinti InGaN junginyje neprarandant našumo?
Ž Podlipskas, K Nomeika, M Nikitina, R Aleksiejūnas
45-oji Lietuvos nacionalinė fizikos konferencija, 2023 m. spalio 25-27d …, 2023
2023
Nepusiausvirųjų krūvininkų dinamika išsigimusiame N-poliškumo GaN
K Nomeika, L Šiaulys, Ž Podlipskas, M Vaičiulis, M Kolenda, A Kadys, ...
45-oji Lietuvos nacionalinė fizikos konferencija, 2023 m. spalio 25-27d …, 2023
2023
A new method for remote detection of ionizing radiation using transient optical absorption
K Nomeika, Ž Podlipskas, V Tamošiūnas, J Jurkevičius, MN Alsamsam, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2022
2022
ENHANCED DETECTION OF UV-INDUCED FREE-CARRIERS BY MULTIPLE PROBE BEAM PASSES INSIDE A CO-DOPED GAGG CRYSTAL
MN Alsamsam, K Nomeika, JJ ˇZydrunas Podlipskas, R Aleksiejunas
Signal 80, 100, 0
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Articles 1–16