Kazimieras Nomeika

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Ramunas AleksiejunasVilnius UniversityVerified email at ff.vu.lt
Saulius NargelasVyresnysis mokslo darbuotojas, Vilniaus universitetasVerified email at ff.vu.lt
Arunas KadysVilnius UniversityVerified email at ff.vu.lt
Saulius Miasojedovasfizinių mokslų daktaras, Vilniaus universitetasVerified email at ageta.lt
Juras MickeviciusVilnius UniversityVerified email at ff.vu.lt
Tadas MalinauskasVilnius University, Institute of Photonics and NanotechnologyVerified email at ff.vu.lt
Patrik ScajevSenior Researcher, Institute of Photonics and Nanotechnology, Vilnius UniversityVerified email at ff.vu.lt
Žydrūnas PodlipskasPhD student, Vilnius UniversityVerified email at tmi.vu.lt
Oleg KravcovVilnius university, Faculty of physics, Institute of photonics and nanotechnologyVerified email at ff.vu.lt
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
L. Y. KuritzkyAntora EnergyVerified email at antora.energy
Cheyenne LynskyUniversity of California, Santa BarbaraVerified email at ucsb.edu

Kazimieras Nomeika

Institute of Photonics and Nanotechnology

Verified email at ff.vu.lt

InGaN MOCVD LED carrier dynamics


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Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ... Journal of Crystal Growth 459, 173-177, 2017	8	2017
Carrier dynamics in blue and green emitting InGaN MQWs R Aleksiejūnas, K Nomeika, S Miasojedovas, S Nargelas, T Malinauskas, ... physica status solidi (b) 252 (5), 977-982, 2015	7	2015
Direct Auger recombination and density-dependent hole diffusion in InN R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ... Scientific reports 8 (1), 1-5, 2018	6	2018
Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures K Nomeika, R Aleksiejūnas, S Miasojedovas, R Tomašiūnas, ... Journal of Luminescence 188, 301-306, 2017	6	2017
PHOTOLUMINESCENCE FEATURES AND CARRIER DYNAMICS IN InGaN HETEROSTRUCTURES WITH WIDE STAIRCASE INTERLAYERS AND DIFFERENTLY SHAPED QUANTUM WELLS. A Kadys, T Malinauskas, M Dmukauskas, I Reklaitis, K Nomeika, ... Lithuanian Journal of Physics 54 (3), 2014	3	2014
Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth K Nomeika, M Dmukauskas, R Aleksiejūnas, P Ščajev, S Miasojedovas, ... Lithuanian Journal of Physics 55 (4), 2015	1	2015
Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs J Mickevičius, K Nomeika, M Dmukauskas, A Kadys, S Nargelas, ... Vacuum 183, 109871, 2021		2021
Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited -Plane and -Plane (,) Quantum Wells R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas, L Kuritzky, C Lynsky, ... Physical Review Applied 14 (5), 054043, 2020		2020
Novel ways of improving quantum efficiency of InGaN LED active layers by controlling carrier diffusivity K Nomeika Vilniaus universitetas, 2019		2019

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