| AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics DA Laleyan, S Zhao, SY Woo, HN Tran, HB Le, T Szkopek, H Guo, ... Nano letters 17 (6), 3738-3743, 2017 | 101 | 2017 |
| Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski, DA Laleyan, RT Rashid, ... Apl Materials 4 (8), 2016 | 84 | 2016 |
| Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi Applied Physics Letters 116 (15), 2020 | 58 | 2020 |
| Monolayer GaN excitonic deep ultraviolet light emitting diodes Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ... Applied Physics Letters 116 (1), 2020 | 47 | 2020 |
| Wafer-scale synthesis of monolayer WSe2: A multi-functional photocatalyst for efficient overall pure water splitting Y Wang, S Zhao, Y Wang, DA Laleyan, Y Wu, B Ouyang, P Ou, J Song, ... Nano Energy 51, 54-60, 2018 | 45 | 2018 |
| On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes S Zhang, AT Connie, DA Laleyan, HPT Nguyen, Q Wang, J Song, I Shih, ... IEEE Journal of Quantum Electronics 50 (6), 483-490, 2014 | 45 | 2014 |
| Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2 T Asaba, Y Wang, G Li, Z Xiang, C Tinsman, L Chen, S Zhou, S Zhao, ... Scientific reports 8 (1), 6520, 2018 | 41 | 2018 |
| Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ... Optics letters 44 (23), 5679-5682, 2019 | 37 | 2019 |
| Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ... Optics letters 44 (23), 5679-5682, 2019 | 37 | 2019 |
| Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy A Pandey, X Liu, Z Deng, WJ Shin, DA Laleyan, K Mashooq, ET Reid, ... Physical Review Materials 3 (5), 053401, 2019 | 35 | 2019 |
| Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ... Applied Physics Letters 116 (17), 2020 | 32 | 2020 |
| Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy DA Laleyan, K Mengle, S Zhao, Y Wang, E Kioupakis, Z Mi Optics express 26 (18), 23031-23039, 2018 | 31 | 2018 |
| Oxygen defect dominated photoluminescence emission of ScxAl1− xN grown by molecular beam epitaxy P Wang, B Wang, DA Laleyan, A Pandey, Y Wu, Y Sun, X Liu, Z Deng, ... Applied Physics Letters 118 (3), 2021 | 28 | 2021 |
| Scalable synthesis of monolayer hexagonal boron nitride on graphene with giant bandgap renormalization P Wang, W Lee, JP Corbett, WH Koll, NM Vu, DA Laleyan, Q Wen, Y Wu, ... Advanced materials 34 (21), 2201387, 2022 | 27 | 2022 |
| Controlling defect formation of nanoscale AlN: toward efficient current conduction of ultrawide‐bandgap semiconductors Y Wu, DA Laleyan, Z Deng, C Ahn, AF Aiello, A Pandey, X Liu, P Wang, ... Advanced Electronic Materials 6 (9), 2000337, 2020 | 24 | 2020 |
| Charge carrier transport properties of Mg-doped Al0. 6Ga0. 4N grown by molecular beam epitaxy X Liu, A Pandey, DA Laleyan, K Mashooq, ET Reid, WJ Shin, Z Mi Semiconductor Science and Technology 33 (8), 085005, 2018 | 19 | 2018 |
| AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics X Liu, K Mashooq, DA Laleyan, ET Reid, Z Mi Photonics Research 7 (6), B12-B23, 2019 | 15 | 2019 |
| Molecular beam epitaxy and characterization of Al0. 6Ga0. 4N epilayers DA Laleyan, X Liu, A Pandey, WJ Shin, ET Reid, K Mashooq, M Soltani, ... Journal of Crystal Growth 507, 87-92, 2019 | 12 | 2019 |
| Optical and interface characteristics of Al0. 56Ga0. 44N/Al0. 62Ga0. 38N multiquantum wells with∼ 280 nm emission grown by plasma-assisted molecular beam epitaxy A Aiello, A Pandey, A Bhattacharya, J Gim, X Liu, DA Laleyan, R Hovden, ... Journal of Crystal Growth 508, 66-71, 2019 | 10 | 2019 |
| Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy DA Laleyan, N Fernández-Delgado, ET Reid, P Wang, A Pandey, ... Applied Physics Letters 116 (15), 2020 | 9 | 2020 |
Zetian MiUniversity of Michigan, Ann ArborVerified email at umich.edu
