Hartmut Bracht, Prof. Dr. rer. nat.
Hartmut Bracht, Prof. Dr. rer. nat.
Institut für Materialphysik, Universität Münster
Verified email at uni-muenster.de
TitleCited byYear
Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions
H Bracht, NA Stolwijk, H Mehrer
Physical Review B 52 (23), 16542, 1995
3821995
Silicon self-diffusion in isotope heterostructures
H Bracht, EE Haller, R Clark-Phelps
Physical review letters 81 (2), 393, 1998
3701998
Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
S Brotzmann, H Bracht
Journal of Applied Physics 103 (3), 033508, 2008
2272008
Vacancy-mediated dopant diffusion activation enthalpies for germanium
A Chroneos, H Bracht, RW Grimes, BP Uberuaga
Applied Physics Letters 92 (17), 172103, 2008
1412008
Self-and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
H Bracht, HH Silvestri, ID Sharp, EE Haller
Physical Review B 75 (3), 035211, 2007
1322007
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
S Brotzmann, H Bracht, JL Hansen, AN Larsen, E Simoen, EE Haller, ...
Physical Review B 77 (23), 235207, 2008
1292008
Diffusion of n-type dopants in germanium
A Chroneos, H Bracht
Applied Physics Reviews 1 (1), 011301, 2014
1202014
Diffusion mechanisms and intrinsic point-defect properties in silicon
H Bracht
MRS bulletin 25 (6), 22-27, 2000
1182000
Diffusion and solubility of copper, silver, and gold in germanium
H Bracht, NA Stolwijk, H Mehrer
Physical Review B 43 (18), 14465, 1991
1121991
Self-diffusion in germanium isotope multilayers at low temperatures
E Hüger, U Tietze, D Lott, H Bracht, D Bougeard, EE Haller, H Schmidt
Applied Physics Letters 93 (16), 162104, 2008
1082008
Large disparity between gallium and antimony self-diffusion in gallium antimonide
H Bracht, SP Nicols, W Walukiewicz, JP Silveira, F Briones, EE Haller
Nature 408 (6808), 69, 2000
1002000
Vacancy-arsenic clusters in germanium
A Chroneos, RW Grimes, BP Uberuaga, S Brotzmann, H Bracht
Applied Physics Letters 91 (19), 192106, 2007
872007
Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
A Chroneos, RW Grimes, BP Uberuaga, H Bracht
Physical Review B 77 (23), 235208, 2008
852008
Diffusion of silicon in crystalline germanium
HH Silvestri, H Bracht, JL Hansen, AN Larsen, EE Haller
Semiconductor science and technology 21 (6), 758, 2006
832006
Atomic transport in germanium and the mechanism of arsenic diffusion
H Bracht, S Brotzmann
Materials Science in Semiconductor Processing 9 (4-5), 471-476, 2006
822006
Self-and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations
H Bracht
Physical Review B 75 (3), 035210, 2007
792007
Fluorine effect on As diffusion in Ge
G Impellizzeri, S Boninelli, F Priolo, E Napolitani, C Spinella, A Chroneos, ...
Journal of Applied Physics 109 (11), 113527, 2011
782011
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures
H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ...
Physical review letters 91 (24), 245502, 2003
772003
Copper related diffusion phenomena in germanium and silicon
H Bracht
Materials science in semiconductor processing 7 (3), 113-124, 2004
742004
Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
H Bracht, NA Stolwijk, M Laube, G Pensl
Applied Physics Letters 77 (20), 3188-3190, 2000
732000
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Articles 1–20