Charles Cornet
Charles Cornet
INSA Rennes - FOTON Institute (France)
Verified email at - Homepage
TitleCited byYear
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
C Cornet, A Schliwa, J Even, F Doré, C Celebi, A Létoublon, E Macé, ...
Physical Review B 74 (3), 035312, 2006
Analysis of the Double Laser Emission Occurring in 1.55-InAs–InP (113)B Quantum-Dot Lasers
K Veselinov, F Grillot, C Cornet, J Even, A Bekiarski, M Gioannini, ...
IEEE Journal of Quantum Electronics 43 (9), 810-816, 2007
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 123509, 2013
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
T Nguyen Thanh, C Robert, W Guo, A Létoublon, C Cornet, G Elias, ...
Journal of applied physics 112 (5), 053521, 2012
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 251110, 2011
X-ray study of antiphase domains and their stability in MBE grown GaP on Si
A Létoublon, W Guo, C Cornet, A Boulle, M Véron, A Bondi, O Durand, ...
Journal of Crystal Growth 323 (1), 409-412, 2011
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
T Quinci, J Kuyyalil, TN Thanh, YP Wang, S Almosni, A Létoublon, ...
Journal of Crystal Growth 380, 157-162, 2013
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots
C Robert, C Cornet, P Turban, TN Thanh, MO Nestoklon, J Even, ...
Physical Review B 86 (20), 205316, 2012
Approach to wetting-layer-assisted lateral coupling of In As∕ In P quantum dots
C Cornet, C Platz, P Caroff, J Even, C Labbé, H Folliot, A Le Corre, ...
Physical Review B 72 (3), 035342, 2005
Atomistic calculations of Ga (NAsP)/GaP (N) quantum wells on silicon substrate: band structure and optical gain
C Robert, M Perrin, C Cornet, J Even, JM Jancu
Applied Physics Letters 100 (11), 111901, 2012
Quantitative investigations of optical absorption in quantum dots emitting at wavelength
C Cornet, C Labbé, H Folliot, N Bertru, O Dehaese, J Even, A Le Corre, ...
Applied physics letters 85 (23), 5685-5687, 2004
Room temperature photoluminescence of high density (In, Ga) As/GaP quantum dots
T Nguyen Thanh, C Robert, C Cornet, M Perrin, JM Jancu, N Bertru, ...
Applied Physics Letters 99 (14), 143123, 2011
Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate
A Rolland, L Pedesseau, J Even, S Almosni, C Robert, C Cornet, ...
Optical and Quantum Electronics 46 (10), 1397-1403, 2014
Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry
J Even, F Doré, C Cornet, L Pedesseau, A Schliwa, D Bimberg
Applied Physics Letters 91 (12), 122112, 2007
Time-resolved pump probe of quantum dots under high resonant excitation
C Cornet, C Labbé, H Folliot, P Caroff, C Levallois, O Dehaese, J Even, ...
Applied Physics Letters 88 (17), 171502, 2006
Impact of the capping layers on lateral confinement in quantum dots for laser applications studied by magnetophotoluminescence
C Cornet, C Levallois, P Caroff, H Folliot, C Labbé, J Even, A Le Corre, ...
Applied Physics Letters 87 (23), 233111, 2005
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
W Guo, A Bondi, C Cornet, A Létoublon, O Durand, T Rohel, ...
Applied Surface Science 258 (7), 2808-2815, 2012
Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots
C Cornet, M Hayne, P Caroff, C Levallois, L Joulaud, E Homeyer, ...
Physical Review B 74 (24), 245315, 2006
quantum dots for midwave infrared emitters: A theoretical study
C Cornet, F Doré, A Ballestar, J Even, N Bertru, A Le Corre, S Loualiche
Journal of applied physics 98 (12), 126105, 2005
First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE
W Guo, A Bondi, C Cornet, H Folliot, A Létoublon, S Boyer‐Richard, ...
physica status solidi c 6 (10), 2207-2211, 2009
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