Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ... 2007 IEEE Symposium on VLSI Technology, 108-109, 2007 | 258 | 2007 |
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications EH Toh, GH Wang, G Samudra, YC Yeo Journal of Applied Physics 103 (10), 2008 | 225 | 2008 |
Characterization and physical origin of fast Vth transient in NBTI of pMOSFETs with SiON dielectric C Shen, MF Li, CE Foo, T Yang, DM Huang, A Yap, GS Samudra, YC Yeo 2006 International Electron Devices Meeting, 1-4, 2006 | 187 | 2006 |
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization EH Toh, GH Wang, G Samudra, YC Yeo Applied physics letters 90 (26), 2007 | 164 | 2007 |
Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions KW Ang, KJ Chui, V Bliznetsov, A Du, N Balasubramanian, MF Li, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 162 | 2004 |
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ... IEEE transactions on electron devices 51 (11), 1840-1848, 2004 | 160 | 2004 |
Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕ drain stressors KW Ang, KJ Chui, V Bliznetsov, CH Tung, A Du, N Balasubramanian, ... Applied Physics Letters 86 (9), 2005 | 148 | 2005 |
Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs H Huang, YC Liang, GS Samudra, TF Chang, CF Huang IEEE Transactions on Power Electronics 29 (5), 2164-2173, 2013 | 137 | 2013 |
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction EH Toh, GH Wang, L Chan, G Samudra, YC Yeo Applied Physics Letters 91 (24), 2007 | 136 | 2007 |
Tunneling field-effect transistor: Effect of strain and temperature on tunneling current PF Guo, LT Yang, Y Yang, L Fan, GQ Han, GS Samudra, YC Yeo IEEE Electron Device Letters 30 (9), 981-983, 2009 | 125 | 2009 |
Device design and scalability of a double-gate tunneling field-effect transistor with silicon–germanium source EH Toh, GH Wang, L Chan, D Sylvester, CH Heng, GS Samudra, YC Yeo Japanese Journal of Applied Physics 47 (4S), 2593, 2008 | 117 | 2008 |
A variational approach to the two-dimensional nonlinear Poisson's equation for the modeling of tunneling transistors C Shen, SL Ong, CH Heng, G Samudra, YC Yeo IEEE Electron Device Letters 29 (11), 1252-1255, 2008 | 112 | 2008 |
Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement TY Liow, KM Tan, R Lee, A Du, CH Tung, G Samudra, WJ Yoo, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 56-57, 2006 | 109 | 2006 |
Oxide-bypassed VDMOS (OBVDMOS): An alternative to superjunction high voltage MOS power devices YC Liang, KP Gan, GS Samudra IEEE Electron Device Letters 22 (8), 407-409, 2001 | 98 | 2001 |
Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon Source and Drain Stressors With High Carbon Content TY Liow, KM Tan, D Weeks, RTP Lee, M Zhu, KM Hoe, CH Tung, M Bauer, ... IEEE Transactions on Electron Devices 55 (9), 2475-2483, 2008 | 94 | 2008 |
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, SB Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010 | 82 | 2010 |
New insights into carrier transport in n-MOSFETs A Lochtefeld, IJ Djomehri, G Samudra, DA Antoniadis IBM Journal of research and development 46 (2.3), 347-357, 2002 | 79 | 2002 |
Tungsten nanocrystals embedded in high-k materials for memory application SK Samanta, WJ Yoo, G Samudra, ES Tok, LK Bera, N Balasubramanian Applied Physics Letters 87 (11), 2005 | 76 | 2005 |
Device physics and characteristics of graphene nanoribbon tunneling FETs SK Chin, D Seah, KT Lam, GS Samudra, G Liang IEEE transactions on electron devices 57 (11), 3144-3152, 2010 | 75 | 2010 |
N-MOSFET with silicon–carbon source/drain for enhancement of carrier transport KJ Chui, KW Ang, N Balasubramanian, MF Li, GS Samudra, YC Yeo IEEE transactions on electron devices 54 (2), 249-256, 2007 | 74 | 2007 |