Markus Weyers
Markus Weyers
Dept. Head Materials Technology, Ferdinand-Braun-Institut
Verified email at - Homepage
Cited by
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Red shift of photoluminescence and absorption in dilute GaAsN alloy layers
M Weyers, MSM Sato, HAH Ando
Japanese Journal of Applied Physics 31 (7A), L853, 1992
Advances in group III-nitride-based deep UV light-emitting diode technology
M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ...
Semiconductor Science and Technology 26 (1), 014036, 2010
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection
MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel
Water research 45 (3), 1481-1489, 2011
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
M Weyers, M Sato
Applied physics letters 62 (12), 1396-1398, 1993
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes
T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ...
Applied Physics Letters 97 (17), 2010
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ...
Semiconductor science and technology 27 (2), 024014, 2012
Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
P Klopp, U Griebner, M Zorn, M Weyers
Applied Physics Letters 98 (7), 2011
Selective growth of GaAs in the MOMBE and MOCVD systems
H Heinecke, A Brauers, F Grafahrend, C Plass, N Pütz, K Werner, ...
Journal of Crystal Growth 77 (1-3), 303-309, 1986
Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ...
Applied Physics Letters 105 (5), 2014
High-power 808 nm lasers with a super-large optical cavity
A Knauer, G Erbert, R Staske, B Sumpf, H Wenzel, M Weyers
Semiconductor science and technology 20 (6), 621, 2005
Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates
M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ...
IEEE Photonics Technology Letters 26 (4), 342-345, 2013
Highly conductive n-AlxGa1− xN layers with aluminum mole fractions above 80%
F Mehnke, T Wernicke, H Pingel, C Kuhn, C Reich, V Kueller, A Knauer, ...
Applied Physics Letters 103 (21), 2013
High quality AlGaN grown on ELO AlN/sapphire templates
U Zeimer, V Kueller, A Knauer, A Mogilatenko, M Weyers, M Kneissl
Journal of crystal growth 377, 32-36, 2013
A comparative study of Ga (CH3) 3 and Ga (C2H5) 3 in the MOMBE of GaAs
N Pütz, H Heinecke, M Heyen, P Balk, M Weyers, H Lüth
Journal of crystal growth 74 (2), 292-300, 1986
High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
M Martens, J Schlegel, P Vogt, F Brunner, R Lossy, J Würfl, M Weyers, ...
Applied Physics Letters 98 (21), 2011
Effect of the AIN nucleation layer growth on AlN material quality
O Reentilä, F Brunner, A Knauer, A Mogilatenko, W Neumann, ...
Journal of Crystal Growth 310 (23), 4932-4934, 2008
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
E Richter, C Hennig, M Weyers, F Habel, JD Tsay, WY Liu, P Brückner, ...
Journal of crystal growth 277 (1-4), 6-12, 2005
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 2015
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