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Min Sup Choi
Min Sup Choi
Department of Materials Science and Engineering, Chungnam National University
Verified email at cnu.ac.kr - Homepage
Title
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Cited by
Year
Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures
GH Lee*, YJ Yu*, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
12052013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
MS Choi*, GH Lee*, YJ Yu*, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo
Nature communications 4, 1624, 2013
7442013
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C Kim*, I Moon*, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, ...
ACS nano 11 (2), 1588-1596, 2017
7222017
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo
ACS nano 8 (9), 9332-9340, 2014
5662014
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung*, MS Choi*, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
2102019
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4, 4041, 2014
1382014
Electrical characterization of 2D materials-based field-effect transistors
SB Mitta*, MS Choi*, A Nipane*, F Ali, C Kim, JT Teherani, J Hone, ...
2D Materials 8 (1), 012002, 2021
1302021
Carrier transport at the metal–MoS 2 interface
F Ahmed, MS Choi, X Liu, WJ Yoo
Nanoscale 7 (20), 9222-9228, 2015
1192015
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
X Liu*, MS Choi*, E Hwang, WJ Yoo, J Sun
Advanced Materials 34 (15), 2108425, 2022
942022
Electrically driven reversible phase changes in layered In2Se3 crystalline film
MS Choi*, B Cheong*, CH Ra*, S Lee, JH Bae, S Lee, GD Lee, CW Yang, ...
Advanced Materials 29 (42), 1703568, 2017
922017
Passivated ambipolar black phosphorus transistors
D Yue, D Lee, YD Jang, MS Choi, HJ Nam, DY Jung, WJ Yoo
Nanoscale 8 (25), 12773-12779, 2016
852016
Plasma treatments to improve metal contacts in graphene field effect transistor
MS Choi, SH Lee, WJ Yoo
Journal of Applied Physics 110 (7), 2011
852011
Effects of plasma treatment on surface properties of ultrathin layered MoS2
S Kim*, MS Choi*, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo
2D Materials 3 (3), 035002, 2016
742016
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering
F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ...
Advanced Functional Materials 27 (4), 1604025, 2017
562017
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
MS Choi*, A Nipane*, BSY Kim*, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
Nature Electronics 4 (10), 731-739, 2021
492021
High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure
SH Lee*, MS Choi*, J Lee, C Ho Ra, X Liu, E Hwang, J Hee Choi, J Zhong, ...
Applied Physics Letters 104 (5), 053103, 2014
462014
Tunneling devices and methods of manufacturing the same
J Choi, W Yoo, SH Lee, MS Choi, X Liu, J LEE
US Patent 9,269,775, 2016
372016
ACS Nano 7, 7931 (2013)
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
Crossref, ISI, 2012
332012
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
A Nipane*, MS Choi*, PJ Sebastian, K Yao, A Borah, P Deshmukh, ...
ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2021
272021
Recent progress in 1D contacts for 2D material-based devices
MS Choi*, N Ali*, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo
Advanced Materials 34 (39), 2202408, 2022
172022
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