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Yevgeniy Puzyrev
Yevgeniy Puzyrev
Data & Applied Scientist, Microsoft
Verified email at microsoft.com
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Year
The effect of intrinsic crumpling on the mechanics of free-standing graphene
RJT Nicholl, HJ Conley, NV Lavrik, I Vlassiouk, YS Puzyrev, VP Sreenivas, ...
Nature communications 6 (1), 8789, 2015
2502015
Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
AKM Newaz, YS Puzyrev, B Wang, ST Pantelides, KI Bolotin
Nature Communications 3 (1), 734, 2012
1692012
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ...
Journal of Applied Physics 109 (3), 2011
1542011
Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs
J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013
1152013
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
1062015
Process dependence of proton-induced degradation in GaN HEMTs
T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
1052010
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
912011
Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene
B Wang, Y Puzyrev, ST Pantelides
Carbon 49 (12), 3983-3988, 2011
882011
Defects and doping and their role in functionalizing graphene
ST Pantelides, Y Puzyrev, L Tsetseris, B Wang
MRS bulletin 37 (12), 1187-1194, 2012
842012
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 2011
622011
Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions
T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ...
Applied Physics Letters 96 (13), 2010
592010
Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors
YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides
Applied Physics Letters 96 (5), 2010
582010
Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors
YS Puzyrev, RD Schrimpf, DM Fleetwood, ST Pantelides
Applied Physics Letters 106 (5), 2015
572015
Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs
Y Puzyrev, S Mukherjee, J Chen, T Roy, M Silvestri, RD Schrimpf, ...
IEEE Transactions on Electron Devices 61 (5), 1316-1320, 2014
552014
Room-temperature diffusive phenomena in semiconductors: The case of AlGaN
KH Warnick, Y Puzyrev, T Roy, DM Fleetwood, RD Schrimpf, ...
Physical Review B 84 (21), 214109, 2011
442011
Excess carbon in silicon carbide
X Shen, MP Oxley, Y Puzyrev, BR Tuttle, G Duscher, ST Pantelides
Journal of Applied Physics 108 (12), 2010
402010
Hot-carrier degradation in GaN HEMTs due to substitutional iron and its complexes
S Mukherjee, Y Puzyrev, J Chen, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Electron Devices 63 (4), 1486-1494, 2016
382016
Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography
X Shen, EA Hernández-Pagan, W Zhou, YS Puzyrev, JC Idrobo, ...
Nature Communications 5 (1), 5431, 2014
382014
Reliability of III–V devices–The defects that cause the trouble
ST Pantelides, Y Puzyrev, X Shen, T Roy, S DasGupta, BR Tuttle, ...
Microelectronic engineering 90, 3-8, 2012
382012
Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections
GD Barmparis, YS Puzyrev, XG Zhang, ST Pantelides
Physical Review B 92 (21), 214111, 2015
342015
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