Dr. Christian Hauswald
Dr. Christian Hauswald
Deutsche Bahn AG - Digitale Schiene Deutschland
Verified email at - Homepage
Cited by
Cited by
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film
M Wolz, C Hauswald, T Flissikowski, T Gotschke, S Fernández-Garrido, ...
Nano letters 15 (6), 3743-3747, 2015
Current path in light emitting diodes based on nanowire ensembles
F Limbach, C Hauswald, J Lähnemann, M Wölz, O Brandt, A Trampert, ...
Nanotechnology 23 (46), 465301, 2012
Photoelectrochemical properties of (In, Ga) N nanowires for water splitting investigated by in situ electrochemical mass spectroscopy
J Kamimura, P Bogdanoff, J Lähnemann, C Hauswald, L Geelhaar, ...
Journal of the American Chemical Society 135 (28), 10242-10245, 2013
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ...
Nanotechnology 25 (45), 455702, 2014
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
P Corfdir, C Hauswald, JK Zettler, T Flissikowski, J Lähnemann, ...
Physical Review B 90 (19), 195309, 2014
Control over the number density and diameter of GaAs nanowires on Si (111) mediated by droplet epitaxy
C Somaschini, S Bietti, A Trampert, U Jahn, C Hauswald, H Riechert, ...
Nano letters 13 (8), 3607-3613, 2013
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ...
Nano letters 16 (2), 973-980, 2016
Origin of the nonradiative decay of bound excitons in GaN nanowires
C Hauswald, P Corfdir, JK Zettler, VM Kaganer, KK Sabelfeld, ...
Physical Review B 90 (16), 165304, 2014
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN
JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ...
Crystal Growth & Design 15 (8), 4104-4109, 2015
Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials
O Marquardt, C Hauswald, M Wölz, L Geelhaar, O Brandt
Nano letters 13 (7), 3298-3304, 2013
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
P Corfdir, JK Zettler, C Hauswald, S Fernández-Garrido, O Brandt, ...
Physical Review B 90 (20), 205301, 2014
Correlation between In content and emission wavelength of InxGa1− xN/GaN nanowire heterostructures
M Wölz, J Lähnemann, O Brandt, VM Kaganer, M Ramsteiner, C Pfüller, ...
Nanotechnology 23 (45), 455203, 2012
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
C Hauswald, T Flissikowski, T Gotschke, R Calarco, L Geelhaar, ...
Physical Review B 88 (7), 075312, 2013
Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films
VM Kaganer, B Jenichen, M Ramsteiner, U Jahn, C Hauswald, F Grosse, ...
Journal of Physics D: Applied Physics 48 (38), 385105, 2015
Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters
C Hauswald, I Giuntoni, T Flissikowski, T Gotschke, R Calarco, HT Grahn, ...
ACS Photonics 4 (1), 52-62, 2017
Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells
C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
Localization and defects in axial (In, Ga) N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy
J Lähnemann, C Hauswald, M Wölz, U Jahn, M Hanke, L Geelhaar, ...
Journal of Physics D: Applied Physics 47 (39), 394010, 2014
Comparison of the Luminous Efficiencies of Ga-and N-Polar In x Ga 1− x N/In y Ga 1− y N Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
S Fernández-Garrido, J Lähnemann, C Hauswald, M Korytov, M Albrecht, ...
Physical Review Applied 6 (3), 034017, 2016
Indium Incorporation in InxGa1-xN/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry
M Wölz, S Fernández-Garrido, C Hauswald, O Brandt, F Limbach, ...
Crustal Growth & Design 12, 5686-5692, 2012
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si (111)
C Pfüller, P Corfdir, C Hauswald, T Flissikowski, X Kong, JK Zettler, ...
Physical Review B 94 (15), 155308, 2016
The system can't perform the operation now. Try again later.
Articles 1–20