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E. S. Hellman
E. S. Hellman
President, Gluejar, Inc.
Verified email at gluejar.com - Homepage
Title
Cited by
Cited by
Year
The polarity of GaN: a critical review
ES Hellman
Materials Research Society Internet Journal of Nitride Semiconductor …, 1998
4411998
Growth of high Tc superconducting thin films using molecular beam epitaxy techniques
C Webb, SL Weng, JN Eckstein, N Missert, K Char, DG Schlom, ...
Applied physics letters 51 (15), 1191-1193, 1987
1761987
Electron affinity at aluminum nitride surfaces
CI Wu, A Kahn, ES Hellman, DNE Buchanan
Applied physics letters 73 (10), 1346-1348, 1998
1321998
Growth of Ga-face and N-face GaN films using ZnO Substrates
ES Hellman, DNE Buchanan, D Wiesmann, I Brener
MRS Internet Journal of Nitride Semiconductor Research 1, 1-6, 1996
1031996
Molecular beam epitaxy of layered Dy‐Ba‐Cu‐O compounds
DG Schlom, JN Eckstein, ES Hellman, SK Streiffer, JS Harris Jr, ...
Applied physics letters 53 (17), 1660-1662, 1988
1001988
Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy
ES Hellman, JS Harris Jr
Journal of Crystal Growth 81 (1-4), 38-42, 1987
1001987
Epitaxial Growth and Orientation of GaN on (1 0 0) g-LiAlO2
ES Hellman, Z Liliental-Weber, DNE Buchanan
MRS Internet Journal of Nitride Semiconductor Research 2 (1), 32, 1997
881997
Epitaxial Ba1−xKxBiO3 films on MgO: Nucleation, cracking, and critical currents
ES Hellman, EH Hartford, EM Gyorgy
Applied physics letters 58 (12), 1335-1337, 1991
791991
Electron tunneling in the high-T c bismuthate superconductors
F Sharifi, A Pargellis, RC Dynes, B Miller, ES Hellman, J Rosamilia, ...
Physical Review B 44 (22), 12521, 1991
741991
All-high Tc Josephson tunnel junction: Ba1 - xKxBiO3/Ba1 - xKxBiO3 junctions
AN Pargellis, F Sharifi, RC Dynes, B Miller, ES Hellman
Applied physics letters 58 (1), 95-96, 1991
741991
Elastic scattering centers in resonant tunneling diodes
E Wolak, KL Lear, PM Pitner, ES Hellman, BG Park, T Weil, JS Harris Jr, ...
Applied physics letters 53 (3), 201-203, 1988
631988
Molecular beam epitaxy of superconducting (Rb,Ba)BiO3
ES Hellman, EH Hartford, RM Fleming
Applied physics letters 55 (20), 2120-2122, 1989
561989
Penetration depth, microwave surface resistance, and gap ratio in NbN and Ba1−xKxBiO3 thin films
MS Pambianchi, SM Anlage, ES Hellman, EH Hartford Jr, M Bruns, ...
Applied physics letters 64 (2), 244-246, 1994
541994
ScAlMgO4: an oxide substrate for GaN epitaxy
ES Hellman, CD Brandle, LF Schneemeyer, D Wiesmann, I Brener, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1996
491996
Normal-state resistivity and Hall effect in Ba 1− x K x BiO 3 epitaxial films
ES Hellman, EH Hartford Jr
Physical Review B 47 (17), 11346, 1993
481993
Superconductor‐insulator‐superconductor tunneling in Ba1−xKxBiO3 grain boundaries
A Kussmaul, ES Hellman, EH Hartford Jr, PM Tedrow
Applied physics letters 63 (20), 2824-2826, 1993
441993
Nucleation of AlN on the (7× 7) Reconstructed Silicon (1 1 1) Surface
ES Hellman, DNE Buchanan, CH Chen
MRS Internet Journal of Nitride Semiconductor Research 3 (1), 43, 1998
431998
Effects of oxygen on the sublimation of alkaline earths from effusion cells
ES Hellman, EH Hartford Jr
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
431994
Epitaxial growth of high‐temperature superconducting thin films
JN Eckstein, DG Schlom, ES Hellman, KE Von Dessonneck, ZJ Chen, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989
401989
Molecular‐beam epitaxy and deposition of high‐Tc superconductors
ES Hellman, DG Schlom, N Missert, K Char, JS Harris Jr, MR Beasley, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988
401988
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