Yonder Berencén
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Room-temperature short-wavelength infrared Si photodetector
Y Berencén, S Prucnal, F Liu, I Skorupa, R Hübner, L Rebohle, S Zhou, ...
Scientific reports 7 (1), 43688, 2017
Current transport and electroluminescence mechanisms in thin SiO films containing Si nanocluster-sensitized erbium ions
O Jambois, Y Berencén, K Hijazi, M Wojdak, AJ Kenyon, F Gourbilleau, ...
Journal of Applied Physics 106, 063526, 2009
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle, D Lang, Y Berencén, ...
Scientific Reports 6 (27643), 2016
Engineering telecom single-photon emitters in silicon for scalable quantum photonics
M Hollenbach, Y Berencén, U Kentsch, M Helm, GV Astakhov
Optics Express 28 (18), 26111-26121, 2020
Breaking the doping limit in silicon by deep impurities
M Wang, A Debernardi, Y Berencén, R Heller, C Xu, Y Yuan, Y Xie, ...
Physical Review Applied 11 (5), 054039, 2019
Extended Infrared Photoresponse in -Hyperdoped at Room Temperature
M Wang, Y Berencén, E García-Hemme, S Prucnal, R Hübner, Y Yuan, ...
Physical Review Applied 10 (2), 024054, 2018
Structural and optical properties of pulsed-laser deposited crystalline β-Ga2O3 thin films on silicon
Y Berencén, Y Xie, M Wang, S Prucnal, L Rebohle, S Zhou
Semiconductor Science and Technology, 2019
Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation
JM Ramírez, F Ferrarese Lupi, O Jambois, Y Berencén, D Navarro-Urrios, ...
Nanotechnology 23 (12), 125203, 2012
Wafer-scale nanofabrication of telecom single-photon emitters in silicon
M Hollenbach, N Klingner, NS Jagtap, L Bischoff, C Fowley, U Kentsch, ...
Nature Communications 13 (1), 1-7, 2022
Toward a 1.54 m Electrically Driven Erbium-Doped Silicon Slot Waveguide and Optical Amplifier
A Tengattini, D Gandolfi, N Prtljaga, A Anopchenko, JM Ramírez, FF Lupi, ...
Lightwave Technology, Journal of 31 (3), 391-397, 2013
Irradiation effects on the structural and optical properties of single crystal β-Ga2O3
C Liu, Y Berencén, J Yang, Y Wei, M Wang, Y Yuan, C Xu, Y Xie, X Li, ...
Semiconductor Science and Technology 33 (9), 095022, 2018
Electroluminescence efficiencies of erbium in silicon-based hosts
S Cueff, JM Ramírez, A Kurvits, Y Berencén, R Zia, B Garrido, R Rizk, ...
Applied Physics Letters 103, 191109-191115, 2013
Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices
J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ...
Journal of Applied Physics 114, 163701, 2013
Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
Y Berencén, R Wutzler, L Rebohle, D Hiller, JM Ramírez, JA Rodríguez, ...
Applied Physics Letters 103 (11), 111102-111104, 2013
Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip
JM Ramírez, F Ferrarese Lupi, Y Berencén, A Anopchenko, JP Colonna, ...
Nanotechnology 24 (11), 115202, 2013
Metal-nitride-oxide-semiconductor light-emitting devices for general lighting
Y Berencén, J Carreras, O Jambois, JM Ramírez, JA Rodríguez, ...
Optics express 19 (103), A234-A244, 2011
Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
M Wang, E García‐Hemme, Y Berencén, R Hübner, Y Xie, L Rebohle, ...
Advanced Optical Materials 9 (4), 2001546, 2021
Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors
Y Berencén, JM Ramírez, O Jambois, C Domínguez, JA Rodríguez, ...
Journal of Applied Physics 112 (3), 2012
Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices
JM Ramírez, Y Berencén, L López-Conesa, JM Rebled, F Peiró, B Garrido
Applied Physics Letters 103 (8), 081102-081105, 2013
Local vibrational modes of Si vacancy spin qubits in SiC
Z Shang, A Hashemi, Y Berencén, HP Komsa, P Erhart, S Zhou, M Helm, ...
Physical Review B 101 (14), 144109, 2020
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