A micro-convection model for thermal conductivity of nanofluids HE Patel, T Sundararajan, T Pradeep, A Dasgupta, N Dasgupta, SK Das PRAMANA-JOURNAL OF PHYSICS, 2005 | 524 | 2005 |

Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on electron devices 60 (10), 3157-3165, 2013 | 237 | 2013 |

Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation DS Havaldar, G Katti, N DasGupta, A DasGupta IEEE transactions on electron devices 53 (4), 737-742, 2006 | 159 | 2006 |

Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs A Dey, A Chakravorty, N DasGupta, A DasGupta IEEE transactions on electron devices 55 (12), 3442-3449, 2008 | 99 | 2008 |

Pulsed laser deposition of TiO2 for MOS gate dielectric R Paily, A DasGupta, N DasGupta, P Bhattacharya, P Misra, T Ganguli, ... Applied Surface Science 187 (3-4), 297-304, 2002 | 86 | 2002 |

An analytical expression for sheet carrier concentration vs gate voltage for HEMT modelling N DasGupta, A DasGupta Solid-state electronics 36 (2), 201-203, 1993 | 85 | 1993 |

Threshold voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation G Katti, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 51 (7), 1169-1177, 2004 | 82 | 2004 |

Semiconductor devices: modelling and technology N DasGupta, A DasGupta PHI Learning Pvt. Ltd., 2004 | 64 | 2004 |

Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al_{2}O_{3}/AlInN/GaN MIS-HEMTG Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 59 | 2014 |

Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature S Turuvekere, DS Rawal, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014 | 51 | 2014 |

Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its modeling G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 64 (9), 3609-3615, 2017 | 48 | 2017 |

Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies PV Raja, M Bouslama, S Sarkar, KR Pandurang, JC Nallatamby, ... IEEE Transactions on Electron Devices 67 (6), 2304-2310, 2020 | 46 | 2020 |

Study of random dopant fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model R Rao, N DasGupta, A DasGupta IEEE Transactions on Device and Materials Reliability 10 (2), 247-253, 2010 | 44 | 2010 |

A continuous analytical model for 2-DEG charge density in AlGaN/GaN HEMTs valid for all bias voltages N Karumuri, S Turuvekere, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014 | 42 | 2014 |

Effect of Sputtered-Al_{2}O_{3}Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTsG Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (4), 1450-1458, 2016 | 41 | 2016 |

Effect of sulfur passivation and polyimide capping on InGaAs-InP PIN photodetectors MR Ravi, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 50 (2), 532-534, 2003 | 39 | 2003 |

Fabrication of low pull-in voltage RF MEMS switches on glass substrate in recessed CPW configuration for V-band application S Jaibir, K Nagendra, DG Amitava Journal of Micromechanics and Microengineering 22 (2), 025001, 2012 | 37 | 2012 |

A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels A Dasgupta, SK Lahiri IEEE transactions on electron devices 35 (3), 390-392, 1988 | 35 | 1988 |

Experimental characterization of piezoelectrically actuated micromachined silicon valveless micropump S Aggarwal, BE Paul, A DasGupta, D Chatterjee Microfluidics and Nanofluidics 21, 1-11, 2017 | 34 | 2017 |

Low-Temperature ICP-CVD SiN_{x}as Gate Dielectric for GaN-Based MIS-HEMTsG Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (12), 4693-4701, 2016 | 34 | 2016 |