Ramunas Aleksiejunas
Ramunas Aleksiejunas
Verified email at ff.vu.lt
Cited by
Cited by
Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
R Aleksiejūnas, M Sūdžius, T Malinauskas, J Vaitkus, K Jarašiūnas, ...
Applied physics letters 83 (6), 1157-1159, 2003
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN
T Malinauskas, R Aleksiejūnas, K Jarašiūnas, B Beaumont, P Gibart, ...
Journal of crystal growth 300 (1), 223-227, 2007
Investigation of nonequilibrium carrier transport in vanadium-doped CdTe and CdZnTe crystals using the time-resolved four-wave mixing technique
M Sudzius, R Aleksiejunas, K Jarasiunas, D Verstraeten, JC Launay
Semiconductor science and technology 18 (4), 367, 2003
Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers
K Jarasiunas, R Aleksiejunas, T Malinauskas, V Gudelis, T Tamulevicius, ...
Review of scientific instruments 78 (3), 033901, 2007
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers
T Malinauskas, K Jarašiūnas, R Aleksiejunas, D Gogova, B Monemar, ...
physica status solidi (b) 243 (7), 1426-1430, 2006
The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
K Neimontas, T Malinauskas, R Aleksiejūnas, M Sūdžius, K Jarašiūnas, ...
Semiconductor science and technology 21 (7), 952, 2006
Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ...
physica status solidi (c) 2 (7), 2095-2098, 2005
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
R Aleksiejūnas, M Sūdžius, V Gudelis, T Malinauskas, K Jarašiūnas, ...
physica status solidi (c), 2686-2690, 2003
Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers
P Ščajev, A Usikov, V Soukhoveev, R Aleksiejūnas, K Jarašiūnas
Applied Physics Letters 98 (20), 202105, 2011
Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives
P Ščajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, ...
The journal of physical chemistry letters 9 (12), 3167-3172, 2018
Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites
P Ščajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, ...
The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ...
Applied Physics Letters 104 (2), 022114, 2014
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ...
physica status solidi (a) 202 (1), 126-130, 2005
Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ...
Applied Physics Letters 86 (4), 041910, 2005
Characterization of differently grown GaN epilayers by time‐resolved four‐wave mixing technique
K Jarašiūnas, T Malinauskas, R Aleksiejūnas, M Sūdžius, E Frayssinet, ...
physica status solidi (a) 202 (4), 566-571, 2005
Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures
K Jarašiūnas, R Aleksiejūnas, T Malinauskas, M Sūdžius, S Miasojedovas, ...
physica status solidi (a) 202 (5), 820-823, 2005
Fast optical nonlinearity induced by space-charge waves in dc-biased GaAs
L Subačius, I Kašalynas, R Aleksiejūnas, K Jarašiūnas
Applied physics letters 83 (8), 1557-1559, 2003
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
K Jarašiūnas, S Nargelas, R Aleksiejūnas, S Miasojedovas, M Vengris, ...
Journal of Applied Physics 113 (10), 103701, 2013
Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells
R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ...
Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
The system can't perform the operation now. Try again later.
Articles 1–20