Ramunas Aleksiejunas
Ramunas Aleksiejunas
Verified email at ff.vu.lt
Cited by
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Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers
R Aleksiejūnas, M Sūdžius, T Malinauskas, J Vaitkus, K Jarašiūnas, ...
Applied physics letters 83 (6), 1157-1159, 2003
All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN
T Malinauskas, R Aleksiejūnas, K Jarašiūnas, B Beaumont, P Gibart, ...
Journal of crystal growth 300 (1), 223-227, 2007
Investigation of nonequilibrium carrier transport in vanadium-doped CdTe and CdZnTe crystals using the time-resolved four-wave mixing technique
M Sudzius, R Aleksiejunas, K Jarasiunas, D Verstraeten, JC Launay
Semiconductor science and technology 18 (4), 367, 2003
The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique
K Neimontas, T Malinauskas, R Aleksiejūnas, M Sūdžius, K Jarašiūnas, ...
Semiconductor science and technology 21 (7), 952, 2006
Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers
T Malinauskas, K Jarašiūnas, R Aleksiejunas, D Gogova, B Monemar, ...
physica status solidi (b) 243 (7), 1426-1430, 2006
Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ...
physica status solidi (c) 2 (7), 2095-2098, 2005
Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers
P Ščajev, A Usikov, V Soukhoveev, R Aleksiejūnas, K Jarašiūnas
Applied Physics Letters 98 (20), 202105, 2011
Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives
P Scajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, T Fujihara, ...
The journal of physical chemistry letters 9 (12), 3167-3172, 2018
Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites
P Ščajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, ...
The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017
Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique
R Aleksiejūnas, M Sūdžius, V Gudelis, T Malinauskas, K Jarašiūnas, ...
physica status solidi (c), 2686-2690, 2003
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ...
Applied Physics Letters 104 (2), 022114, 2014
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ...
physica status solidi (a) 202 (1), 126-130, 2005
Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ...
Applied Physics Letters 86 (4), 041910, 2005
Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers
K Jarasiunas, R Aleksiejunas, T Malinauskas, V Gudelis, T Tamulevicius, ...
Review of scientific instruments 78 (3), 033901, 2007
Fast optical nonlinearity induced by space-charge waves in dc-biased GaAs
L Subačius, I Kašalynas, R Aleksiejūnas, K Jarašiūnas
Applied physics letters 83 (8), 1557-1559, 2003
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells
R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ...
Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
K Jarašiūnas, S Nargelas, R Aleksiejūnas, S Miasojedovas, M Vengris, ...
Journal of Applied Physics 113 (10), 103701, 2013
Dynamics of free carrier absorption in InN layers
S Nargelas, R Aleksiejūnas, M Vengris, T Malinauskas, K Jarašiūnas, ...
Applied Physics Letters 95 (16), 162103, 2009
Optical and electron beam studies of carrier transport in quasibulk GaN
Y Lin, E Flitsyian, L Chernyak, T Malinauskas, R Aleksiejunas, ...
Applied Physics Letters 95 (9), 092101, 2009
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