Jonas Jurkevičius
Jonas Jurkevičius
Research fellow, Vilnius University
Verified email at ff.vu.lt
Title
Cited by
Cited by
Year
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 100 (8), 081902, 2012
362012
Efficient cerium-based sol–gel derived phosphors in different garnet matrices for light-emitting diodes
A Katelnikovas, J Jurkevičius, K Kazlauskas, P Vitta, T Jüstel, A Kareiva, ...
Journal of alloys and compounds 509 (21), 6247-6251, 2011
292011
Photoluminescence efficiency droop and stimulated recombination in GaN epilayers
J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis
Optics express 20 (23), 25195-25200, 2012
272012
Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells
J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ...
Optics express 22 (102), A491-A497, 2014
252014
Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
222015
Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 101 (4), 041912, 2012
212012
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
152016
Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
152015
Photoluminescence efficiency in AlGaN quantum wells
G Tamulaitis, J Mickevičius, J Jurkevičius, MS Shur, M Shatalov, J Yang, ...
Physica B: Condensed Matter 453, 40-42, 2014
132014
Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers
P Ščajev, J Jurkevičius, J Mickevičius, K Jarašiūnas, H Kato
Diamond and Related Materials 57, 9-16, 2015
122015
Photoluminescence efficiency of BGaN epitaxial layers with high boron content
J Jurkevičius, J Mickevičius, A Kadys, M Kolenda, G Tamulaitis
Physica B: Condensed Matter 492, 23-26, 2016
102016
Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ...
AIP advances 6 (4), 045212, 2016
102016
Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers
J Mickevičius, J Jurkevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, ...
Journal of Physics D: Applied Physics 48 (27), 275105, 2015
92015
Efficiency droop and carrier transport in AlGaN epilayers and heterostructures
J Mickevičius, G Tamulaitis, J Jurkevičius, MS Shur, M Shatalov, J Yang, ...
physica status solidi (b) 252 (5), 961-964, 2015
72015
Nonradiative recombination, carrier localization, and emission efficiency of AlGaN epilayers with different Al content
J Mickevičius, Ž Podlipskas, R Aleksiejūnas, A Kadys, J Jurkevičius, ...
Journal of Electronic Materials 44 (12), 4706-4709, 2015
62015
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Ž Podlipskas, J Jurkevičius, A Kadys, S Miasojedovas, T Malinauskas, ...
Scientific reports 9 (1), 1-8, 2019
52019
Extreme radiation resistance in InN
Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ...
Journal of Alloys and Compounds 789, 48-55, 2019
32019
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Ž Podlipskas, R Aleksiejūnas, S Nargelas, J Jurkevičius, J Mickevičius, ...
Current Applied Physics 16 (6), 633-637, 2016
32016
Influence of proton irradiation on carrier mobility in InN epitaxial layers
A Mekys, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, G Tamulaitis
Thin Solid Films 692, 137619, 2019
22019
Photoluminescence efficiency in wide-band-gap iii-nitride semiconductors and their heterostructures
J Jurkevičius
Vilniaus universitetas, 2016
2016
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Articles 1–20