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Tarun Kumar Sharma
Tarun Kumar Sharma
Professor, HBNI Mumbai & Head, Semiconductor Lasers & Devices Division, RRCAT Indore, India
Verified email at rrcat.gov.in
Title
Cited by
Cited by
Year
Strain-driven light-polarization switching in deep ultraviolet nitride emitters
TK Sharma, D Naveh, E Towe
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035305, 2011
802011
Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition
P Misra, TK Sharma, S Porwal, LM Kukreja
Applied physics letters 89 (16), 2006
702006
A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk …
VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak
Journal of Physics D: Applied Physics 47 (6), 065103, 2014
582014
Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si
VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ...
Journal of Crystal Growth 310 (15), 3428-3435, 2008
582008
Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition
RS Ajimsha, AK Das, P Misra, MP Joshi, LM Kukreja, R Kumar, ...
Journal of Alloys and Compounds 638, 55-58, 2015
492015
Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition
P Misra, TK Sharma, LM Kukreja
Current Applied Physics 9 (1), 179-183, 2009
472009
Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm
TK Sharma, E Towe
Journal of Applied Physics 107 (2), 2010
442010
High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
TK Sharma, M Zorn, F Bugge, R Hulsewede, G Erbert, M Weyers
IEEE Photonics Technology Letters 14 (7), 887-889, 2002
442002
Studies on MOVPE growth of GaP epitaxial layer on Si (001) substrate and effects of annealing
VK Dixit, T Ganguli, TK Sharma, R Kumar, S Porwal, V Shukla, A Ingale, ...
Journal of crystal growth 293 (1), 5-13, 2006
392006
Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy
TK Sharma, S Porwal, R Kumar, S Kumar
Review of scientific instruments 73 (4), 1835-1840, 2002
342002
On ternary nitride substrates for visible semiconductor light-emitters
TK Sharma, E Towe
Applied Physics Letters 96 (19), 2010
322010
Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells
TK Sharma, R Jangir, S Porwal, R Kumar, T Ganguli, M Zorn, U Zeimer, ...
Physical Review B—Condensed Matter and Materials Physics 80 (16), 165403, 2009
302009
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1−xAs/GaAs quantum wells by magneto-photoluminescence
S Haldar, VK Dixit, G Vashisht, SK Khamari, S Porwal, TK Sharma, ...
Scientific Reports 7 (1), 4905, 2017
282017
Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells
SD Singh, VK Dixit, S Porwal, R Kumar, AK Srivastava, T Ganguli, ...
Applied Physics Letters 97 (11), 2010
282010
Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs
TK Sharma, S Kumar, KC Rustagi
Journal of applied physics 92 (10), 5959-5965, 2002
282002
Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN
A Chatterjee, SK Khamari, VK Dixit, SM Oak, TK Sharma
Journal of Applied Physics 118 (17), 2015
252015
Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well
SD Singh, S Porwal, TK Sharma, KC Rustagi
Journal of applied physics 99 (6), 2006
252006
Effect of high dose γ-ray irradiation on GaAs pin photodetectors
VK Dixit, SK Khamari, S Manwani, S Porwal, K Alexander, TK Sharma, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
242015
Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200nm
VA Kheraj, CJ Panchal, PK Patel, BM Arora, TK Sharma
Optics & Laser Technology 39 (7), 1395-1399, 2007
232007
Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy
TK Sharma, MR Gokhale, BM Arora
Journal of Crystal Growth 213 (3-4), 241-249, 2000
232000
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