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Bethany X. Rutherford
Bethany X. Rutherford
Purdue University, Los Alamos National Lab
Verified email at purdue.edu - Homepage
Title
Cited by
Cited by
Year
Metal-free oxide-nitride heterostructure as a tunable hyperbolic metamaterial platform
X Wang, H Wang, J Jian, BX Rutherford, X Gao, X Xu, X Zhang, H Wang
Nano Letters 20 (9), 6614-6622, 2020
462020
Strain-driven nanodumbbell structure and enhanced physical properties in hybrid vertically aligned nanocomposite thin films
X Sun, Q Li, J Huang, M Fan, BX Rutherford, RL Paldi, J Jian, X Zhang, ...
Applied Materials Today 16, 204-212, 2019
372019
Nitride‐Oxide‐Metal Heterostructure with Self‐Assembled Core–Shell Nanopillar Arrays: Effect of Ordering on Magneto‐Optical Properties
X Wang, J Jian, H Wang, J Liu, Y Pachaury, P Lu, BX Rutherford, X Gao, ...
Small 17 (5), 2007222, 2021
332021
Tunable, room-temperature multiferroic Fe-BaTiO3 vertically aligned nanocomposites with perpendicular magnetic anisotropy
B Zhang, J Huang, BX Rutherford, P Lu, S Misra, M Kalaswad, Z He, ...
Materials Today Nano 11, 100083, 2020
292020
Structural and Optical Properties of High Entropy (La,Lu,Y,Gd,Ce)AlO3 Perovskite Thin Films
ZJ Corey, P Lu, G Zhang, Y Sharma, BX Rutherford, S Dhole, P Roy, ...
Advanced Science 9 (29), 2202671, 2022
192022
Au-encapsulated Fe nanorods in oxide matrix with tunable magneto-optic coupling properties
B Zhang, M Kalaswad, BX Rutherford, S Misra, Z He, H Wang, Z Qi, ...
ACS Applied Materials & Interfaces 12 (46), 51827-51836, 2020
182020
Tuning magnetic anisotropy in Co–BaZrO 3 vertically aligned nanocomposites for memory device integration
B Zhang, J Huang, J Jian, BX Rutherford, L Li, S Misra, X Sun, H Wang
Nanoscale Advances 1 (11), 4450-4458, 2019
182019
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
S Kunwar, CB Somodi, RA Lalk, BX Rutherford, Z Corey, P Roy, D Zhang, ...
Advanced Electronic Materials 9 (1), 2200816, 2023
172023
Role of Defects and Power Dissipation on Ferroelectric Memristive Switching
P Roy, S Kunwar, D Zhang, D Chen, Z Corey, BX Rutherford, H Wang, ...
Advanced Electronic Materials 8 (6), 2101392, 2022
142022
Strain Effects on the Growth of La0.7Sr0.3MnO3 (LSMO)–NiO Nanocomposite Thin Films via Substrate Control
BX Rutherford, B Zhang, X Wang, X Sun, Z Qi, H Wang, H Wang
ACS omega 5 (37), 23793-23798, 2020
82020
Tunable Three-Phase Co–CeO2–BaTiO3 Hybrid Metamaterials with Nano-Mushroom-Like Structure for Tailorable Multifunctionalities
BX Rutherford, B Zhang, M Kalaswad, Z He, D Zhang, X Wang, J Liu, ...
ACS Applied Nano Materials 5 (5), 6297-6304, 2022
72022
Tailorable multifunctionalities in ultrathin 2D Bi-based layered supercell structures
Z He, X Gao, D Zhang, P Lu, X Wang, M Kalaswad, BX Rutherford, ...
Nanoscale 13 (39), 16672-16679, 2021
62021
Single-Step Fabrication of Au-Fe-BaTiO3 Nanocomposite Thin Films Embedded with Non-Equilibrium Au-Fe Alloyed Nanostructures
BX Rutherford, H Dou, B Zhang, Z He, JP Barnard, RL Paldi, H Wang
Nanomaterials 12 (19), 3460, 2022
52022
TiN–Fe Vertically Aligned Nanocomposites Integrated on Silicon as a Multifunctional Platform toward Device Applications
M Kalaswad, D Zhang, BX Rutherford, J Lu, JP Barnard, Z He, J Liu, ...
Crystals 12 (6), 849, 2022
32022
Combinatorial Growth of Vertically Aligned Nanocomposite Thin Films for Accelerated Exploration in Composition Variation
BX Rutherford, D Zhang, L Quigley, JP Barnard, B Yang, J Lu, S Kunwar, ...
Small Science 3 (11), 2300049, 2023
2023
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors (Adv. Electron. Mater. 1/2023).
S Kunwar, CB Somodi, RA Lalk, BX Rutherford, Z Corey, P Roy, D Zhang, ...
Advanced Electronic Materials 9 (1), 2023
2023
Nanostructure Tunability in Vertically Aligned Nanocomposite Thin Films
B Rutherford
Purdue University Graduate School, 2022
2022
Structural and Optical Properties of High Entropy (La, Lu, Y, Gd, Ce) AlO3 Perovskite Thin Films
Y Wu, Z Corey, P Lu, G Zhang, Y Sharma, B Rutherford, S Dhole, P Roy, ...
Wiley, 2022
2022
Implementing ceramic materials into neuromorphic memory devices through oxide-based memristors
BX Rutherford
ACers Bulletin 100 (6), 48, 2021
2021
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