| Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Y Kobayashi, K Kumakura, T Akasaka, T Makimoto Nature 484 (7393), 223-227, 2012 | 432 | 2012 |
| Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence K Kumakura, T Makimoto, N Kobayashi, T Hashizume, T Fukui, ... Applied Physics Letters 86 (5), 2005 | 284 | 2005 |
| Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy K Kumakura, T Makimoto, N Kobayashi Journal of applied physics 93 (6), 3370-3375, 2003 | 170 | 2003 |
| Activation energy and electrical activity of Mg in Mg-doped InxGa1-xN (x< 0.2) K Kumakura, T Makimoto, N Kobayashi Japanese Journal of Applied Physics 39 (4B), L337, 2000 | 146 | 2000 |
| Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers T Hashizume, S Anantathanasarn, N Negoro, E Sano, H Hasegawa, ... Japanese journal of applied physics 43 (6B), L777, 2004 | 100 | 2004 |
| High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with base T Makimoto, K Kumakura, N Kobayashi Applied Physics Letters 79 (3), 380-381, 2001 | 98 | 2001 |
| Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices K Kumakura, N Kobayashi Japanese journal of applied physics 38 (9A), L1012, 1999 | 95 | 1999 |
| Low-resistance nonalloyed ohmic contact to -type GaN using strained InGaN contact layer K Kumakura, T Makimoto, N Kobayashi Applied physics letters 79 (16), 2588-2590, 2001 | 86 | 2001 |
| High-power characteristics of GaN/InGaN double heterojunction bipolar transistors T Makimoto, Y Yamauchi, K Kumakura Applied physics letters 84 (11), 1964-1966, 2004 | 81 | 2004 |
| High hole concentrations in Mg-doped InGaN grown by MOVPE K Kumakura, T Makimoto, N Kobayashi Journal of crystal growth 221 (1-4), 267-270, 2000 | 81 | 2000 |
| Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs JY Shiu, JC Huang, V Desmaris, CT Chang, CY Lu, K Kumakura, ... IEEE electron device letters 28 (6), 476-478, 2007 | 72 | 2007 |
| Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN M Hiroki, K Kumakura, Y Kobayashi, T Akasaka, T Makimoto, ... Applied Physics Letters 105 (19), 2014 | 66 | 2014 |
| High current gain of GaN/InGaN double heterojunction bipolar transistors using base regrowth of T Makimoto, K Kumakura, N Kobayashi Applied Physics Letters 83 (5), 1035-1037, 2003 | 61 | 2003 |
| Formation and characterization of coupled quantum dots (CQDs) by selective area metalorganic vapor phase epitaxy K Kumakura, J Motohisa, T Fukui Journal of crystal growth 170 (1-4), 700-704, 1997 | 57 | 1997 |
| Novel formation method of quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy KKK Kumakura, KNK Nakakoshi, JMJ Motohisa, TFT Fukui, ... Japanese journal of applied physics 34 (8S), 4387, 1995 | 57 | 1995 |
| Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature K Kumakura, T Makimoto, N Kobayashi Japanese Journal of Applied Physics 39 (3A), L195, 2000 | 54 | 2000 |
| High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content K Ebata, J Nishinaka, Y Taniyasu, K Kumakura Japanese Journal of Applied Physics 57 (4S), 04FH09, 2018 | 53 | 2018 |
| Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field K Kumakura, T Makimoto, N Kobayashi Japanese Journal of Applied Physics 39 (4S), 2428, 2000 | 53 | 2000 |
| A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN T Makimoto, K Kumakura, Y Kobayashi, T Akasaka, H Yamamoto Applied physics express 5 (7), 072102, 2012 | 49 | 2012 |
| Nitride semiconductor stack and its semiconductor device T Makimoto, K Kumakura, N Kobayashi US Patent 6,667,498, 2003 | 48 | 2003 |
