Thomas Tiedje

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Sebastien TixierHoneywellVerified email at telus.net
Shane R JohnsonArizona State UniversityVerified email at asu.edu
Erin C. YoungUniversity of California, Santa BarbaraVerified email at engineering.ucsb.edu
Dan Beaton, Daniel Beaton, Daniel A...University of British Columbia, National Renewable Energy Lab, St. Francis XavierVerified email at nrel.gov
Ryan B. LewisMcMaster UniversityVerified email at mcmaster.ca
Christian LavoieIBM T.J. Watson Research CenterVerified email at us.ibm.com
Sebastien FrancoeurPolytechnique MontrealVerified email at polymtl.ca
Mostafa MasnadiElectrical and Computer Engineering, University of British ColumbiaVerified email at ece.ubc.ca
Wolfgang EberhardtDESYVerified email at bessy.de
Vahid Bahrami YektaPhD University of VictoriaVerified email at UVIC.CA
Jens H SchmidSenior Research Officer, National Research Council CanadaVerified email at nrc-cnrc.gc.ca
Mario BeaudoinResearch Associate, University of British ColumbiaVerified email at physics.ubc.ca
Ben RuckAssociate Professor, Victoria University of WellingtonVerified email at vuw.ac.nz
Jeff DahnProfessor of Physics and Atmospheric Science, Dalhousie UniversityVerified email at dal.ca
Jeff F. YoungProfessor of Physics and Astronomy, University of British ColumbiaVerified email at phas.ubc.ca
Theodore D MoustakasBoston UniversityVerified email at bu.edu
Sangam ChatterjeeInstitute for Experimentalphysik Physics I, Justus-Liebig-University GiessenVerified email at physik.uni-giessen.de
François SchiettekatteUniversité de MontréalVerified email at umontreal.ca
Stefan EisebittMax-Born-Institut & Technische Universität BerlinVerified email at mbi-berlin.de
Peter PersansRensselaer Polytechnic InstituteVerified email at rpi.edu

Thomas Tiedje

Electrical and Computer Engineering, University of Victoria, Victoria, BC

Verified email at uvic.ca

Semiconductor materials Photovoltaics


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Disorder and the optical-absorption edge of hydrogenated amorphous silicon GD Cody, T Tiedje, B Abeles, B Brooks, Y Goldstein Physical Review Letters 47 (20), 1480, 1981	1413	1981
Limiting efficiency of silicon solar cells TOM Tiedje, ELI Yablonovitch, GD Cody, BG Brooks IEEE Transactions on electron devices 31 (5), 711-716, 1984	1100	1984
A physical interpretation of dispersive transport in disordered semiconductors T Tiedje, A Rose Solid State Communications 37 (1), 49-52, 1981	908	1981
Evidence for exponential band tails in amorphous silicon hydride T Tiedje, JM Cebulka, DL Morel, B Abeles Physical Review Letters 46 (21), 1425, 1981	633	1981
Amorphous semiconductor superlattices B Abeles, T Tiedje Physical Review Letters 51 (21), 2003, 1983	593	1983
Molecular beam epitaxy growth of S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ... Applied physics letters 82 (14), 2245-2247, 2003	496	2003
Band gap of S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje Applied physics letters 82 (22), 3874-3876, 2003	474	2003
Giant spin-orbit bowing in GaAs 1− x Bi x B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje Physical review letters 97 (6), 067205, 2006	466	2006
Temperature dependence of the Urbach edge in GaAs SR Johnson, T Tiedje Journal of applied physics 78 (9), 5609-5613, 1995	225	1995
Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole Ultramicroscopy 58 (1), 104-113, 1995	225	1995
Laser Stark spectroscopy in the 10 [mu] m region: The [nu] 3 bands of CH3F SM Freund, G Duxbury, M Romheld, JT Tiedje, T Oka Journal of Molecular Spectroscopy 52 (1), 38-57, 1974	223	1974
Optical absorption edge of semi-insulating GaAs and InP at high temperatures M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje Applied Physics Letters 70 (26), 3540-3542, 1997	214	1997
Composition dependence of photoluminescence of alloys X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang Applied physics letters 95 (4), 041903, 2009	207	2009
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing Z Batool, K Hild, TJC Hosea, X Lu, T Tiedje, SJ Sweeney Journal of Applied Physics 111 (11), 113108, 2012	205	2012
Effect of molecular beam epitaxy growth conditions on the Bi content of X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick Applied Physics Letters 92 (19), 192110, 2008	197	2008
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ... Applied physics letters 70 (11), 1438-1440, 1997	187	1997
Growth of high Bi concentration GaAs_1−xBi_x by molecular beam epitaxy RB Lewis, M Masnadi-Shirazi, T Tiedje Applied Physics Letters 101 (8), 082112, 2012	180	2012
Recombination centers in phosphorous doped hydrogenated amorphous silicon CR Wronski, B Abeles, T Tiedje, GD Cody Solid State Communications 44 (10), 1423-1426, 1982	169	1982
Preparation and characterization of B x C 1− x thin films with the graphite structure BM Way, JR Dahn, T Tiedje, K Myrtle, M Kasrai Physical Review B 46 (3), 1697, 1992	163	1992
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy DG Cooke, FA Hegmann, EC Young, T Tiedje Applied physics letters 89 (12), 122103, 2006	149	2006

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