Jayeeta Bhattacharyya
Jayeeta Bhattacharyya
Indian Institue of Technology Madras
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Intersublevel spectroscopy on single InAs-quantum dots by terahertz near-field microscopy
R Jacob, S Winnerl, M Fehrenbacher, J Bhattacharyya, H Schneider, ...
Nano letters 12 (8), 4336-4340, 2012
Observation of forbidden exciton transitions mediated by Coulomb interactions in photoexcited semiconductor quantum wells
WD Rice, J Kono, S Zybell, S Winnerl, J Bhattacharyya, H Schneider, ...
Physical Review Letters 110 (13), 137404, 2013
Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation
J Bhattacharyya, S Ghosh, HT Grahn
Applied Physics Letters 93 (5), 2008
Polarized photoluminescence and absorption in A-plane InN films
J Bhattacharyya, S Ghosh, MR Gokhale, BM Arora, H Lu, WJ Schaff
Applied physics letters 89 (15), 2006
Simultaneous time and wavelength resolved spectroscopy under two-colour near infrared and terahertz excitation
J Bhattacharyya, M Wagner, S Zybell, S Winnerl, D Stehr, M Helm, ...
Review of Scientific Instruments 82 (10), 2011
Electronic band structure of wurtzite InN around the fundamental gap in the presence of biaxial strain
J Bhattacharyya, S Ghosh
physica status solidi (a) 204 (2), 439-446, 2007
Charge transfer mediated photoluminescence enhancement in carbon dots embedded in TiO2 nanotube matrix
A Babusenan, B Pandey, SC Roy, J Bhattacharyya
Carbon 161, 535-541, 2020
Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots
J Bhattacharyya, M Wagner, M Helm, M Hopkinson, LR Wilson, ...
Applied Physics Letters 97 (3), 2010
Polarized photovoltage spectroscopy study of InAs∕ GaAs (001) quantum dot ensembles
J Bhattacharyya, S Ghosh, S Malzer, GH Döhler, BM Arora
Applied Physics Letters 87 (21), 2005
Are AlN and GaN substrates useful for the growth of non‐polar nitride films for UV emission? The oscillator strength perspective
J Bhattacharyya, S Ghosh, HT Grahn
physica status solidi (b) 246 (6), 1184-1187, 2009
Magnetic control of Coulomb scattering and terahertz transitions among excitons
J Bhattacharyya, S Zybell, F Eßer, M Helm, H Schneider, L Schneebeli, ...
Physical Review B 89 (12), 125313, 2014
In-plane interdot carrier transfer in InAs/GaAs quantum dots
J Bhattacharyya, S Zybell, S Winnerl, M Helm, M Hopkinson, LR Wilson, ...
Applied Physics Letters 100 (15), 2012
Phase sensitive monitoring of electron bunch form and arrival time in superconducting linear accelerators
C Kaya, C Schneider, A Al-Shemmary, W Seidel, M Kuntzsch, ...
Applied Physics Letters 100 (14), 2012
Enhancing the efficiency of red TADF OLED by optimizing the guest-host matrix and charge balance engineering
INS Manoj, D Barah, S Sahoo, J Bhattacharyya, D Ray
Synthetic Metals 270, 116599, 2020
Inter-sublevel dynamics in single InAs/GaAs quantum dots induced by strong terahertz excitation
D Stephan, J Bhattacharyya, YH Huo, OG Schmidt, A Rastelli, M Helm, ...
Applied Physics Letters 108 (8), 2016
Wavelength modulation spectroscopy using novel mechanical light chopper blade designs
J Bhattacharyya, S Ghosh, BM Arora
Review of scientific instruments 76 (8), 2005
Study of exciton-polaron interaction in pentacene field effect transistors using high sensitive photocurrent measurements
H Kesavan, S Sahoo, S Jena, PK Manda, AK Baranwal, S Dutta, ...
Journal of Applied Physics 126 (14), 2019
High response organic uv-blue photodetector with low operating voltage using chemical vapor deposited poly (p-phenylenevinylene)
D Bhat, S Sahoo, J Bhattacharyya, D Ray
Organic Electronics 87, 105975, 2020
Organic field effect transistors (OFETs) of poly (p-phenylenevinylene) fabricated by chemical vapor deposition (CVD) with improved hole mobility
D Bhat, S Jena, A Babusenan, J Bhattacharyya, D Ray
Synthetic Metals 255, 116108, 2019
Optical polarization properties of M-plane GaN films investigated by transmittance anisotropy spectroscopy
J Bhattacharyya, S Ghosh, BM Arora, O Brandt, HT Grahn
Applied Physics Letters 91 (25), 2007
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