| Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy E Gaubas, T Čeponis, D Dobrovolskas, J Mickevičius, J Pavlov, ... Thin Solid Films 660, 231-235, 2018 | 42 | 2018 |
| Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content A Vaitkevičius, J Mickevičius, D Dobrovolskas, Ö Tuna, C Giesen, ... Journal of Applied Physics 115 (21), 2014 | 32 | 2014 |
| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 30 | 2015 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 27 | 2018 |
| Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ... physica status solidi (b) 252 (5), 1138-1141, 2015 | 19 | 2015 |
| Confocal spectroscopy of InGaN LED structures D Dobrovolskas, J Mickevičius, E Kuokštis, G Tamulaitis, M Shur, ... Journal of Physics D: Applied Physics 44 (13), 135104, 2011 | 16 | 2011 |
| Photoluminescence of Si nanocrystals under selective excitation D Dobrovolskas, J Mickevičius, G Tamulaitis, V Reipa Journal of Physics and Chemistry of Solids 70 (2), 439-443, 2009 | 15 | 2009 |
| Growth of Ce-doped LGSO fiber-shaped crystals by the micro pulling down technique V Kononets, O Benamara, G Patton, C Dujardin, S Gridin, A Belsky, ... Journal of Crystal Growth 412, 95-102, 2015 | 12 | 2015 |
| Distribution of luminescent centers in Ce3+-ion doped amorphous stoichiometric glass BaO–2SiO2 and dedicated glass ceramics MV Korjik, A Vaitkevicius, D Dobrovolskas, EV Tret’yak, E Trusova, ... Optical Materials 47, 129-134, 2015 | 11 | 2015 |
| Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ... Journal of Crystal Growth 459, 173-177, 2017 | 10 | 2017 |
| A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser E Jelmakas, A Kadys, T Malinauskas, D Paipulas, D Dobrovolskas, ... Journal of Physics D: Applied Physics 48 (28), 285104, 2015 | 10 | 2015 |
| Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content G Tamulaitis, J Mickevičius, D Dobrovolskas, E Kuokštis, MS Shur, ... physica status solidi c 9 (7), 1677-1679, 2012 | 10 | 2012 |
| Self-assembled nanoparticles of p-phenylenediacetonitrile derivatives with fluorescence turn-on K Kazlauskas, A Miasojedovas, D Dobrovolskas, E Arbačiauskienė, ... Journal of Nanoparticle Research 14, 1-13, 2012 | 10 | 2012 |
| Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates E Gaubas, P Baronas, T Čeponis, L Deveikis, D Dobrovolskas, E Kuokstis, ... Materials Science in Semiconductor Processing 91, 341-355, 2019 | 9 | 2019 |
| Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ... Nanomaterials 8 (12), 1039, 2018 | 9 | 2018 |
| Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness D Dobrovolskas, A Vaitkevičius, J Mickevičius, Ö Tuna, C Giesen, ... Journal of Applied Physics 114 (16), 2013 | 9 | 2013 |
| Nonradiative and radiative recombination in CdS polycrystalline structures E Gaubas, V Borschak, I Brytavskyi, T Čeponis, D Dobrovolskas, ... Advances in Condensed Matter Physics 2013, 2013 | 9 | 2013 |
| Correlation between growth interruption and indium segregation in InGaN MQWs M Dmukauskas, J Mickevičius, D Dobrovolskas, A Kadys, S Nargelas, ... Journal of Luminescence 221, 117103, 2020 | 8 | 2020 |
| Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells M Dmukauskas, A Kadys, T Malinauskas, T Grinys, I Reklaitis, K Badokas, ... Journal of Physics D: Applied Physics 49 (50), 505101, 2016 | 8 | 2016 |
| Extreme radiation resistance in InN Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ... Journal of Alloys and Compounds 789, 48-55, 2019 | 7 | 2019 |
