| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 18 | 2015 |
| Confocal spectroscopy of InGaN LED structures D Dobrovolskas, J Mickevičius, E Kuokštis, G Tamulaitis, M Shur, ... Journal of Physics D: Applied Physics 44 (13), 135104, 2011 | 16 | 2011 |
| Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content A Vaitkevičius, J Mickevičius, D Dobrovolskas, Ö Tuna, C Giesen, ... Journal of Applied Physics 115 (21), 213512, 2014 | 14 | 2014 |
| Photoluminescence of Si nanocrystals under selective excitation D Dobrovolskas, J Mickevičius, G Tamulaitis, V Reipa Journal of Physics and Chemistry of Solids 70 (2), 439-443, 2009 | 14 | 2009 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 13 | 2018 |
| Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ... physica status solidi (b) 252 (5), 1138-1141, 2015 | 13 | 2015 |
| Growth of Ce-doped LGSO fiber-shaped crystals by the micro pulling down technique V Kononets, O Benamara, G Patton, C Dujardin, S Gridin, A Belsky, ... Journal of Crystal Growth 412, 95-102, 2015 | 10 | 2015 |
| Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content G Tamulaitis, J Mickevičius, D Dobrovolskas, E Kuokštis, MS Shur, ... physica status solidi c 9 (7), 1677-1679, 2012 | 10 | 2012 |
| A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser E Jelmakas, A Kadys, T Malinauskas, D Paipulas, D Dobrovolskas, ... Journal of Physics D: Applied Physics 48 (28), 285104, 2015 | 9 | 2015 |
| Nonradiative and radiative recombination in CdS polycrystalline structures E Gaubas, V Borschak, I Brytavskyi, T Čeponis, D Dobrovolskas, ... Advances in Condensed Matter Physics 2013, 2013 | 9 | 2013 |
| Self-assembled nanoparticles of p-phenylenediacetonitrile derivatives with fluorescence turn-on K Kazlauskas, A Miasojedovas, D Dobrovolskas, E Arbačiauskienė, ... Journal of Nanoparticle Research 14 (6), 1-13, 2012 | 9 | 2012 |
| Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ... Journal of Crystal Growth 459, 173-177, 2017 | 8 | 2017 |
| Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness D Dobrovolskas, A Vaitkevičius, J Mickevičius, Ö Tuna, C Giesen, ... Journal of Applied Physics 114 (16), 163516, 2013 | 8 | 2013 |
| Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ... Nanomaterials 8 (12), 1039, 2018 | 7 | 2018 |
| Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy E Gaubas, T Čeponis, D Dobrovolskas, J Mickevičius, J Pavlov, ... Thin Solid Films 660, 231-235, 2018 | 7 | 2018 |
| Spatially‐resolved photoluminescence study of high indium content InGaN LED structures G Tamulaitis, J Mickevičius, D Dobrovolskas, E Kuokštis, M Shur, ... physica status solidi c 7 (7‐8), 1869-1871, 2010 | 7 | 2010 |
| Enhancement of InN luminescence by introduction of graphene interlayer D Dobrovolskas, S Arakawa, S Mouri, T Araki, Y Nanishi, J Mickevičius, ... Nanomaterials 9 (3), 417, 2019 | 6 | 2019 |
| InGaN/GaN MQW photoluminescence enhancement by localized surface plasmon resonance on isolated Ag nanoparticles D Dobrovolskas, J Mickevičius, S Nargelas, HS Chen, CG Tu, CH Liao, ... Plasmonics 9 (5), 1183-1187, 2014 | 6 | 2014 |
| Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range J Mickevičius, D Dobrovolskas, J Aleknavičius, T Grinys, A Kadys, ... Journal of Luminescence 199, 379-383, 2018 | 5 | 2018 |
| Study of recombination characteristics in MOCVD grown GaN epi-layers on Si E Gaubas, T Ceponis, D Dobrovolskas, T Malinauskas, D Meskauskaite, ... Semiconductor Science and Technology 32 (12), 125014, 2017 | 5 | 2017 |
