Darius Dobrovolskas
Darius Dobrovolskas
Vilnius University
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Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
A Vaitkevičius, J Mickevičius, D Dobrovolskas, Tuna, C Giesen, ...
Journal of Applied Physics 115 (21), 213512, 2014
Confocal spectroscopy of InGaN LED structures
D Dobrovolskas, J Mickevičius, E Kuokštis, G Tamulaitis, M Shur, ...
Journal of Physics D: Applied Physics 44 (13), 135104, 2011
Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
Photoluminescence of Si nanocrystals under selective excitation
D Dobrovolskas, J Mickevičius, G Tamulaitis, V Reipa
Journal of Physics and Chemistry of Solids 70 (2), 439-443, 2009
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ...
Applied Surface Science 427, 1027-1032, 2018
Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content
G Tamulaitis, J Mickevičius, D Dobrovolskas, E Kuokštis, MS Shur, ...
physica status solidi c 9 (7), 1677-1679, 2012
Growth of Ce-doped LGSO fiber-shaped crystals by the micro pulling down technique
V Kononets, O Benamara, G Patton, C Dujardin, S Gridin, A Belsky, ...
Journal of Crystal Growth 412, 95-102, 2015
A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser
E Jelmakas, A Kadys, T Malinauskas, D Paipulas, D Dobrovolskas, ...
Journal of Physics D: Applied Physics 48 (28), 285104, 2015
Nonradiative and radiative recombination in CdS polycrystalline structures
E Gaubas, V Borschak, I Brytavskyi, T Čeponis, D Dobrovolskas, ...
Advances in Condensed Matter Physics 2013, 2013
Self-assembled nanoparticles of p-phenylenediacetonitrile derivatives with fluorescence turn-on
K Kazlauskas, A Miasojedovas, D Dobrovolskas, E Arbačiauskienė, ...
Journal of Nanoparticle Research 14 (6), 1-13, 2012
Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy
E Gaubas, T Čeponis, D Dobrovolskas, J Mickevičius, J Pavlov, ...
Thin Solid Films 660, 231-235, 2018
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
J Mickevičius, D Dobrovolskas, R Aleksiejūnas, K Nomeika, T Grinys, ...
Journal of Crystal Growth 459, 173-177, 2017
Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness
D Dobrovolskas, A Vaitkevičius, J Mickevičius, Tuna, C Giesen, ...
Journal of Applied Physics 114 (16), 163516, 2013
Enhancement of InN luminescence by introduction of graphene interlayer
D Dobrovolskas, S Arakawa, S Mouri, T Araki, Y Nanishi, J Mickevičius, ...
Nanomaterials 9 (3), 417, 2019
Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage
V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ...
Nanomaterials 8 (12), 1039, 2018
Distribution of luminescent centers in Ce3+-ion doped amorphous stoichiometric glass BaO–2SiO2 and dedicated glass ceramics
MV Korjik, A Vaitkevicius, D Dobrovolskas, EV Tret’yak, E Trusova, ...
Optical Materials 47, 129-134, 2015
InGaN/GaN MQW photoluminescence enhancement by localized surface plasmon resonance on isolated Ag nanoparticles
D Dobrovolskas, J Mickevičius, S Nargelas, HS Chen, CG Tu, CH Liao, ...
Plasmonics 9 (5), 1183-1187, 2014
Spatially‐resolved photoluminescence study of high indium content InGaN LED structures
G Tamulaitis, J Mickevičius, D Dobrovolskas, E Kuokštis, M Shur, ...
physica status solidi c 7 (7‐8), 1869-1871, 2010
Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells
M Dmukauskas, A Kadys, T Malinauskas, T Grinys, I Reklaitis, K Badokas, ...
Journal of Physics D: Applied Physics 49 (50), 505101, 2016
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